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MC1GU064HCYB-0QC00 Datasheet(数据表) 27 Page - Samsung semiconductor

部件型号  MC1GU064HCYB-0QC00
说明  MultiMediaCard Specification
下载  66 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
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MC1GU064HCYB-0QC00 Datasheet(HTML) 27 Page - Samsung semiconductor

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MultiMediaCard
TM
27
Maximum Supply Current Consumption at VCC = 2.7 V
VDD_R_CURR_MIN / VDD_W_CURR_MIN
Code for current consumption at 2.7 V
2:0
2:0 0 = 0.5 mA; 1 = 1 mA; 2 = 5 mA;
3 = 10 mA; 4 = 25 mA; 5 = 35 mA;
6 = 60 mA; 7 = 100 mA
VDD_R_CURR_MAX, VDD_W_CURR_MAX
The maximum supply current at the maximum supply voltage VCC (3.6 V) is coded as follows:
Maximum Supply Current Consumption at VCC = 3.6 V
VDD_R_CURR_MAX / VDD_W_CURR_MAX
Code for current consumption at 3.6 V
2:0
0 = 1 mA; 1 = 5 mA; 2 = 10 mA; 3 = 25 mA;
4 = 35 mA; 5 = 45 mA; 6 = 80mA; 7 = 200 mA
C_SIZE_MULT
This parameter is used for coding a factor MULT for computing the total device size (refer to ‘C_SIZE)
The factor MULT is defined as 2
C_SIZE_MULT+2.
ERASE_GRP_SIZE
The contents of this register are a 5bit binary coded value, used to calculate the size of the erasable unit
of these MultimediaCard. The size of the erase unit (also referred to as erase group in chapter “memory
Array Partitioning”) is determined by the ERASE_GRP_SIZE and the ERASE_GRP_MULT entries of the
CSD
Size of erasable unit = (ERASE_GRP_SIZE + 1) * (ERASE_GRP_MULT + 1)
The following table shows the size of erase group for each model.
ERASE_GRP_SIZE
ERASE_GRP_MULT
Card Capacity
0x0
0x1F
32Mbytes
0x0
0x1F
64Mbytes
0x7
0x1F
128Mbytes
0x7
0x1F
256Mbytes
0x7
0x1F
512Mbyes
0x7
0x1F
1Gbytes
ERASE_GRP_MULT
A 5bit binary coded value is used for calculating the size of the erasable unit of these MultiMediaCards.
The
parameter
ERASE_GRP_MULT
is
permanently
assigned
to
the
value
0x1F.
See
ERASE_GRP_SIZE section for detailed description.




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