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MC1GU064HCYB-0QC00 Datasheet(数据表) 26 Page - Samsung semiconductor

部件型号  MC1GU064HCYB-0QC00
说明  MultiMediaCard Specification
下载  66 Pages
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制造商  SAMSUNG [Samsung semiconductor]
网页  http://www.samsung.com/Products/Semiconductor
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MC1GU064HCYB-0QC00 Datasheet(HTML) 26 Page - Samsung semiconductor

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MultiMediaCard
TM
26
WRITE_BLK_MISALIGN is permanently assigned to the value “0”, signaling that crossing physical block
boundaries is not allowed.
READ_BLK_MISALIGN
Defines if the data block to be read by one command can be spread over more than one physical block
of the memory device. The size of the data block is defined in READ_BLK_LEN. READ_BLK_MISALIGN
= 0 signals that crossing physical block boundaries is not allowed. READ_BLOCK_MISALIGN = 1
signals that crossing physical block boundaries is allowed. These MultiMediaCards do not support read
block operations with boundary crossing. The parameter READ_BLK_MISALIGN is permanently
assigned to the value “0”.
DSR_IMP
Defines if the configurable driver stage option is integrated on the card or not. If implemented a driver
stage register (DSR) must be implemented also.
DSR_IMP
DSR type
0
No DSR implemented
1
DSR implemented
The parameter DSR_IMP is permanently assigned to the value “0”.
C_SIZE
This parameter is used to compute the card capacity. The card capacity is computed from the entries
C_SIZE, C_SIZE_MULT and READ_BLK_LEN as follows:
Memory Capacity = BLOCKNR*BLOCK_LEN
Where
BLOCKNR = (C_SIZE+1)*MULT
MULT = 2
C_SIZE_MULT+2 (C_SIZE_MULT < 8)
BLOCK_LEN = 2
READ_BLK_LEN, (READ_BLK_LEN < 12)
The following table shows the card capacity for each model.
C-SIZE
C_SIZE_MULT
READ_BLK_LEN
Card Capacity
0x7A7
3
9
32Mbytes
0xF4F
3
9
64Mbytes
0x3D3
6
9
128Mbytes
0x7A7
6
9
256Mbytes
0xF4F
6
9
512Mbytes
0xF4F
7
9
1Gbytes
VDD_R_CURR_MIN, VDD_W_CURR_MIN
The maximum supply current at the minimum supply voltage VCC (2.7 V) is coded as follows
:




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