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2SC3526H 数据表(PDF) 1 Page - Panasonic Semiconductor |
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2SC3526H 数据表(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page Transistors 1 Publication date: February 2003 SJC00133BED 2SC3526H Silicon NPN epitaxial planar type For display video output ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited) Cob • Wide current range ■ Absolute Maximum Ratings T a = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 110 V Collector-emitter voltage VCER 100 V (Resistor between B and E) Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 3.5 V Collector current IC 150 mA Peak collector current ICP 300 mA Collector power dissipation PC 1W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = 100 µA, IE = 0 110 V Collector-emitter voltage (Resistor VCER IC = 500 µA, RBE = 470 Ω 100 V between B and E) Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 050 V Emitter-base voltage (Collector open) VEBO IE = 100 µA, I C = 0 3.5 V Collector-emitter cutoff current (Base open) ICEO VCE = 35 V, IB = 010 µA Forward current transfer ratio hFE VCE = 5 V, IC = 100 mA 20 Collector-emitter saturation voltage VCE(sat) IC = 150 mA, I B = 15 mA 0.5 V Transition frequency fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 MHz fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 Collector output capacitance Cob VCB = 30 V, I E = 0, f = 1 MHz 3 pF (Common base, input open circuited) ■ Electrical Characteristics T a = 25°C ± 3°C Unit: mm Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package 5.9±0.2 0.7±0.1 4.9±0.2 2.54±0.15 (1.27) (1.27) 0.45 +0.2 –0.1 0.45 +0.2 –0.1 13 2 |
类似零件编号 - 2SC3526H |
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类似说明 - 2SC3526H |
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