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WS6264 Datasheet(数据表) 6 Page - List of Unclassifed Manufacturers

部件型号  WS6264
说明  High Speed Super Low Power SRAM
下载  13 Pages
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制造商  ETC1 [List of Unclassifed Manufacturers]
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WS6264 Datasheet(HTML) 6 Page - List of Unclassifed Manufacturers

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Rev. 1.0
6
DATA RETENTION CHARACTERISTICS ( TA = 0o ~70oC, Vcc = 5.0V) )
Name
Parameter
Test Condition
MIN TYP(1) MAX
Unit
VDR
VCC for Data Retention
/CE1 ≧ VCC-0.2V, VIN
VCC-0.2V or VIN≦0.2V
2.0
V
ICCDR
Data Retention Current
/CE1≧VCC-0.2V, VIN
VCC-0.2V or VIN≦0.2V
0.5
5
uA
TCDR
Chip Deselect to Data
Retention Time
0
ns
tR
Operation Recovery Time
Refer to
Retention Waveform
tRC (2)
ns
1.TA = 25
oC
2. tRC= .Read Cycle Time
LOW Vcc DATA RETENTION WAVEFORM(1) ( /CE1 Controlled )
Data Retention Mode
CE1
V
tCDR
tR
IH
VIH
DR
V > 2.0V
VCC
CE1
>
- 0.2V
CC
V
High Speed Super Low Power SRAM
8K-Word By 8 Bit
WS6264




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