MCP111T-195TT datasheet(3/22 Pages) MICROCHIP

部件名	MCP111T-195TT

功能描述	Micropower Voltage Detector

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制造商	MICROCHIP [Microchip Technology]

网页	http://www.microchip.com

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3 / 22 page

 2004 Microchip Technology Inc.

DS21889B-page 3

MCP111/112

FIGURE 1-1:

Timing Diagram.

AC CHARACTERISTICS

VOUT Low-level Output Voltage

VOL

——

0.4

V

IOL = 500 µA, VDD = VTRIP(MIN)

VOUT High-level Output Voltage

VOH

VDD – 0.6

—

V

IOH = 1 mA, For only MCP112

(push-pull output)

Open-Drain Output Leakage Current

(MCP111 only)

IOD

—0.1

—

µA

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111),

TA = –40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Note

1:

Trip point is ±1.5% from typical value.

2:

Trip point is ±2.5% from typical value.

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ

(only MCP111), TA = –40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

VDD Detect to VOUT Inactive

tRPU

—90

—

µs

Figure 1-1 and CL = 50 pF

(Note 1)

VDD Detect to VOUT Active

tRPD

—

130

—

µs

VDD ramped from VTRIP(MAX) +

250 mV down to VTRIP(MIN) –

250 mV, per Figure 1-1,

CL = 50 pF (Note 1)

VOUT Rise Time After VOUT Active

tRT

—5

—

µs

For VOUT 10% to 90% of final

value per Figure 1-1, CL = 50 pF

(Note 1)

Note 1:

These parameters are for design guidance only and are not 100% tested.

1V

VTRIP

VDD

VOUT

tRPU

VOH

tRT

tRPD

VOL

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类似说明 - MCP111T-195TT

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