TC55NEM216AFTN55 datasheet(9/11 Pages) TOSHIBA

部件名	TC55NEM216AFTN55

功能描述	TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

标志

9 / 11 page

TC55NEM216AFTN55,70

2002-07-04

9/11

Note:

(1)

When CE is operating at the VIH(min.) level(2.2 V), the operating current is given by IDDS1 during the

transition of VDD from 4.5 to 2.4 V.

(2)

In UB (or LB ) controlled data retention mode, minimum standby current mode is entered when CE ≤

0.2 V or CE ≥ VDD − 0.2 V.

(3)

When UB (or LB ) is operating at the VIH(min.) level(2.2 V), the operating current is given by IDDS1

during the transition of VDD from 4.5 to 2.4 V.

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