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IRHG7110 Datasheet(数据表) 2 Page - International Rectifier

部件型号  IRHG7110
说明  RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036AB)
下载  8 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
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IRHG7110 Datasheet(HTML) 2 Page - International Rectifier

   
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IRHG7110
Pre-Irradiation
2
www.irf.com
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
1.0
ISM
Pulse Source Current (Body Diode) ➀
4.0
VSD
Diode Forward Voltage
1.5
V
Tj = 25°C, IS = 1.0A, VGS = 0V ➃
trr
Reverse Recovery Time
110
nS
Tj = 25°C, IF = 1.0A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
390
nC
VDD ≤ 25V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified) (Per Die)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.125
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.7
VGS = 12V, ID = 1.0A
Resistance
0.6
VGS = 12V, ID = 0.6A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
0.7
S ( )VDS > 15V, IDS = 0.6A ➃
IDSS
Zero Gate Voltage Drain Current
25
VDS= 80V, VGS= 0V
250
VDS = 80V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
11
VGS =12V, ID = 1.0A,
Qgs
Gate-to-Source Charge
3.0
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
4.0
td(on)
Turn-On Delay Time
20
VDD = 50V, ID = 1.0A,
tr
Rise Time
16
VGS =12V, RG = 7.5Ω
td(off)
Turn-Off Delay Time
65
tf
Fall Time
45
LS + LD
Total Inductance
10
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Input Capacitance
300
VGS = 0V, VDS = 25V
Coss
Output Capacitance
100
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
16
nA
nH
ns
µA
Thermal Resistance (Per Die)
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
17
RthJA
Junction-to-Ambient
90
Typical socket mount
°C/W




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