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NTE912 数据表(PDF) 2 Page - NTE Electronics

部件名 NTE912
功能描述  Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)
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制造商  NTE [NTE Electronics]
网页  http://www.nteinc.com
标志 NTE - NTE Electronics

NTE912 数据表(HTML) 2 Page - NTE Electronics

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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
20
60
V
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
15
24
V
Collector Substrate Breakdown Voltage
V(BR)CIO IC = 10µA, ICI = 0
20
60
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
7
V
Collector Cutoff Current
ICBO
VCB = 10V, IE = 0
0.002
40
nA
ICEO
VCE = 10V, IB = 0
0.5
µA
Static Forward Current Transfer Ratio
hFE
VCE = 3V
IC = 10mA
100
IC = 1mA
40
100
IC = 10µA
54
Input Offset Current for Matched Pair
Q1 and Q2. |IIO
1
– I
IO
2
|
VCE = 3V, IC = 1mA
0.3
2.0
µA
Base Emitter Voltage
VBE
VCE = 3V
IE = 1mA
0.715
V
IE = 10mA
0.800
V
Magnitude of Input Offset Voltage for
Differential Pair |V
BE
1
– V
BE
2
|
VCE = 3V, IC = 1mA
0.45
5.0
mV
Magnitude of Input Offset Voltage for
Isolated Transistors |V
BE
3
– V
BE
4
|
|V
BE
5
– V
BE
3
|
|V
BE
4
– V
BE
5
|
VCE = 3V, IC = 1mA
0.45
5.0
mV
Temperature Coefficient of Base Emitter
Voltage
∆VBE
∆T
VCE = 3V, IC = 1mA
–1.9
mV/
°C
Collector Emitter Saturation Voltage
VCES
IB = 1mA, IC = 10mA
0.23
V
Temperature Coefficient:
Magnitude of Input–Offset Voltage
|
∆VIO|
∆T
VCE = 3V, IC = 1mA
1.1
µV/°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Dynamic Characteristics
Low–Frequency Noise Figure
NF
f = 1kHz, VCE = 3V, IC = 100µA,
Source Resistance = 1k
3.25
dB
Low–Frequency, Small–Signal
Equivalent Circuit Characteristics:
Forward Current Transfer Ratio
hfe
f = 1kHz, VCE = 3V, IC = 1mA
110
Short–Circuit Input Impedance
hie
3.5
k
Open–Circuit Output Impedance
hoe
15.6
µmhos
Open–Circuit Reverse Voltage
Transfer Ratio
hre
1.8x10–4
Admittance Characteristics:
Forward Transfer Admittance
Yfe
f = 1kHz, VCE = 3V, IC = 1mA
31–j1.5
Input Admittance
Yie
0.3+j0.04
Output Admittance
Yoe
0.001+j0.03


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