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NTE912 数据表(PDF) 1 Page - NTE Electronics

部件名 NTE912
功能描述  Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially-Connected Transistor Pair)
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制造商  NTE [NTE Electronics]
网页  http://www.nteinc.com
标志 NTE - NTE Electronics

NTE912 数据表(HTML) 1 Page - NTE Electronics

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NTE912
Integrated Circuit
General Purpose Transistor Array
(Three Isolated Transistors and One Differentially–Connected Transistor Pair)
Description:
The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic sub-
strate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differ-
entially–connected pair.
The transistors of the NTE912 are well suited to a wide variety of applications in low power systems
in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How-
ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec-
trical and thermal matching.
Features:
D Two Matched Pairs of Transistors:
VBE matched ±5mV
Input Offset Current 2
µA Max. @ IC = 1mA
D 5 General Purpose Monolithic Transistors
D Operation from DC to 120MHz
D Wide Operating Current Range
D Low Noise Figure: 3.2dB Typ @ 1kHz
Applications:
D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency
Range from DC to VHF
D Custom Designed Differential Amplifiers
D Temperature Compensated Amplifiers
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Power Dissipation (TA ≤ +55°C), PD
Each Transistor
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Package
750mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 55
°C
6.67mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Emitter Voltage, VCEO
15V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Base Voltage, VCBO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Substrate Voltage (Note 1), VCIO
20V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Base Voltage, VEBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Topr
–55
° to +125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16”
±1/32” from case, 10sec max), TL
+265
°C
. . . . . . . . . . .
Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub-
strate (Pin13) must be connected to the most negative point in the external circuit to maintain
isolation between transistors and to provide for normal transistor action.


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