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NTE912 数据表(PDF) 1 Page - NTE Electronics |
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NTE912 数据表(HTML) 1 Page - NTE Electronics |
1 / 3 page NTE912 Integrated Circuit General Purpose Transistor Array (Three Isolated Transistors and One Differentially–Connected Transistor Pair) Description: The NTE912 consists of five general–purpose silicon NPN transistors on a common monolithic sub- strate in a 14–Lead DIP type package. Two of the transistors are internally connected to form a differ- entially–connected pair. The transistors of the NTE912 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits. How- ever, in addition, they provide the very significant inherent integrated circuit advantages of close elec- trical and thermal matching. Features: D Two Matched Pairs of Transistors: VBE matched ±5mV Input Offset Current 2 µA Max. @ IC = 1mA D 5 General Purpose Monolithic Transistors D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure: 3.2dB Typ @ 1kHz Applications: D General Use In All Types of Signal Processing Systems Operating Anywhere in the Frequency Range from DC to VHF D Custom Designed Differential Amplifiers D Temperature Compensated Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (TA ≤ +55°C), PD Each Transistor 300mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total Package 750mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 55 °C 6.67mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Emitter Voltage, VCEO 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Base Voltage, VCBO 20V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Substrate Voltage (Note 1), VCIO 20V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter Base Voltage, VEBO 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC 50mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range, Topr –55 ° to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (During Soldering, 1/16” ±1/32” from case, 10sec max), TL +265 °C . . . . . . . . . . . Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub- strate (Pin13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. |
类似零件编号 - NTE912 |
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类似说明 - NTE912 |
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