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NTE904 数据表(PDF) 2 Page - NTE Electronics

部件名 NTE904
功能描述  Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)
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制造商  NTE [NTE Electronics]
网页  http://www.nteinc.com
标志 NTE - NTE Electronics

NTE904 数据表(HTML) 2 Page - NTE Electronics

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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Collector Cutoff Current
ICBO
VCB = 10V, IE = 0
0.002
nA
ICEO
VCE = 10V, IB = 0
0.5
µA
Collector Cutoff Current (Darlington Pair)
ICEOD
VCE = 10V, IB = 0
5
µA
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0
15
24
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
30
60
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
7
V
Collector–Substrate Breakdown Voltage
V(BR)CIO IC = 10µA, IC1 = 0
40
60
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1mA
0.23
0.5
V
Static Forward Current Transfer Ratio
hFE
VCE = 3V, IC = 10mA
50
100
VCE = 3V, IC = 1mA
60
100
200
VCE = 3V, IC = 10µA
54
Magnitude of Static–Beta Ratio
(Isolated Transistors Q1 and Q2)
VCE = 3V, IC1 = IC2 = 1mA
0.9
0.97
Static Forward Current Transfer Ratio
hFED
VCE = 3V, IC = 1mA
2000
5400
(Darlington Pair Q3 and Q4)
VCE = 3V, IC = 10µA
1000
2800
Base–Emitter Voltage
VBE
VCE = 3V, IE = 1mA
0.600 0.715 0.800
V
VCE = 3V, IE = 10mA
0.800 0.900
V
Input Offset Voltage
VCE = 3V, IE = 1mA
0.48
2.0
mV
Temperature Coefficient of Base–Emitter
Voltage (Q1 – Q2)
VCE = 3V, IE = 1mA
1.9
mV/
°C
Base (Q3)–Emitter (Q4) Voltage
VBED
VCE = 3V, IE = 10mA
1.46
1.60
V
Darlington Pair
VCE = 3V, IE = 1mA
1.10
1.32
1.50
V
Temperature Coefficient of Base–Emitter
Voltage (Darlington Pair Q3–Q4)
VCE = 3V, IE = 1mA
4.4
mV/
°C
Temperature Coefficient of Magnitude of
Input Offset Voltage
VCC = 6V, VEE = –6V,
IC1 = IC2 = 1mA
10
µV/°C
Low Frequency Noise Figure
NF
VCE = 3V, IC = 100µA,
f = 1kHz, RS = 1kΩ
3.25
dB
Low Frequency, Small–Signal Equivalent Circuit Characteristics
Forward Current Transfer Ratio
hfe
VCE = 3V, IC = 1mA, f = 1kHz
110
Short–Circuit Input Impedance
hie
3.5
k
Open–Circuit Output Impedance
hoe
15.6
µmhos
Open–Circuit Reverse Voltage Transfer Ratio
hre
1.8 x 104 (Typ)
Admittance Characteristics
Forward Transfer Admittance
Yfe
VCE = 3V, IC = 1mA, f = 1kHz
31–j1.5 (Typ)
mmho
Input Admittance
Yie
0.3+j0.04 (Typ)
mmho
Output Admittance
Yoe
0.001+j0.03 (Typ)
mmho
Gain–Bandwidth Product
fT
VCE = 3V, IC = 3mA
300
500
MHz
Emitter–Base Capacitance
CEB
VEB = 3V, IE =0
0.6
pF
Collector–Base Capacitance
CCB
VCB = 3V, IC = 0
0.58
pF
Collector–Substrate Capacitance
CCI
VCI = 3V, IC = 0
2.8
pF


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