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NTE904 数据表(PDF) 2 Page - NTE Electronics |
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NTE904 数据表(HTML) 2 Page - NTE Electronics |
2 / 3 page Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics Collector Cutoff Current ICBO VCB = 10V, IE = 0 – 0.002 – nA ICEO VCE = 10V, IB = 0 – – 0.5 µA Collector Cutoff Current (Darlington Pair) ICEOD VCE = 10V, IB = 0 – – 5 µA Collector–Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 – V Collector–Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 30 60 – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 – V Collector–Substrate Breakdown Voltage V(BR)CIO IC = 10µA, IC1 = 0 40 60 – V Collector–Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA – 0.23 0.5 V Static Forward Current Transfer Ratio hFE VCE = 3V, IC = 10mA 50 100 – VCE = 3V, IC = 1mA 60 100 200 VCE = 3V, IC = 10µA 54 – – Magnitude of Static–Beta Ratio (Isolated Transistors Q1 and Q2) VCE = 3V, IC1 = IC2 = 1mA 0.9 0.97 – Static Forward Current Transfer Ratio hFED VCE = 3V, IC = 1mA 2000 5400 – (Darlington Pair Q3 and Q4) VCE = 3V, IC = 10µA 1000 2800 – Base–Emitter Voltage VBE VCE = 3V, IE = 1mA 0.600 0.715 0.800 V VCE = 3V, IE = 10mA – 0.800 0.900 V Input Offset Voltage VCE = 3V, IE = 1mA – 0.48 2.0 mV Temperature Coefficient of Base–Emitter Voltage (Q1 – Q2) VCE = 3V, IE = 1mA – 1.9 – mV/ °C Base (Q3)–Emitter (Q4) Voltage VBED VCE = 3V, IE = 10mA – 1.46 1.60 V Darlington Pair VCE = 3V, IE = 1mA 1.10 1.32 1.50 V Temperature Coefficient of Base–Emitter Voltage (Darlington Pair Q3–Q4) VCE = 3V, IE = 1mA – 4.4 – mV/ °C Temperature Coefficient of Magnitude of Input Offset Voltage VCC = 6V, VEE = –6V, IC1 = IC2 = 1mA – 10 – µV/°C Low Frequency Noise Figure NF VCE = 3V, IC = 100µA, f = 1kHz, RS = 1kΩ – 3.25 – dB Low Frequency, Small–Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio hfe VCE = 3V, IC = 1mA, f = 1kHz – 110 – Short–Circuit Input Impedance hie – 3.5 – k Ω Open–Circuit Output Impedance hoe – 15.6 – µmhos Open–Circuit Reverse Voltage Transfer Ratio hre 1.8 x 104 (Typ) Admittance Characteristics Forward Transfer Admittance Yfe VCE = 3V, IC = 1mA, f = 1kHz 31–j1.5 (Typ) mmho Input Admittance Yie 0.3+j0.04 (Typ) mmho Output Admittance Yoe 0.001+j0.03 (Typ) mmho Gain–Bandwidth Product fT VCE = 3V, IC = 3mA 300 500 – MHz Emitter–Base Capacitance CEB VEB = 3V, IE =0 – 0.6 – pF Collector–Base Capacitance CCB VCB = 3V, IC = 0 – 0.58 – pF Collector–Substrate Capacitance CCI VCI = 3V, IC = 0 – 2.8 – pF |
类似零件编号 - NTE904 |
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类似说明 - NTE904 |
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