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NTE904 数据表(PDF) 1 Page - NTE Electronics |
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NTE904 数据表(HTML) 1 Page - NTE Electronics |
1 / 3 page NTE904 Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair) Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic sub- strate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the NTE904 are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close electrical and thermal matching inherent in integrated circuit construction. Features: D Matched Monolithic General Purpose Transistors D Current Gain Matched to ±10% D Base–Emitter Voltage Matched to ±2mV D Operation from DC to 120MHz D Wide Operating Current Range D Low Noise Figure Applications: D General use in Signal Processing Systems in DC through VHF Range D Custom Designed Differential Amplifiers D Temperature Compenstaed Amplifiers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage (Each Transistor), VCEO 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Base Voltage (Each Transistor), VCBO 30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Substrate Voltage (Each Transistor, Note 1), VCIO 40V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage (Each Transistor), VEBO 5V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current (Each Transistor), IC 50mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation, PD Any One Transistor 300mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total package 450mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Derate Above 85 °C 5mW/ °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range, Topr –55 ° to +125°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –65 ° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Note 1. The collector of each transistor is isolated from the substrate by an integral diode. The sub- strate (Pin10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. |
类似零件编号 - NTE904 |
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类似说明 - NTE904 |
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