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BQ27743 Datasheet(数据表) 7 Page - Texas Instruments

部件型号  BQ27743
说明  Single-Cell Li-Ion Battery Fuel Gauge with Programmable Hardware Protection
下载  42 Pages
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制造商  TI1 [Texas Instruments]
网页  http://www.ti.com
标志 

 7 page
background image
7
bq27743
www.ti.com
SLUSCM0A – JUNE 2017 – REVISED SEPTEMBER 2018
Product Folder Links: bq27743
Submit Documentation Feedback
Copyright © 2017–2018, Texas Instruments Incorporated
Thermal Information (continued)
THERMAL METRIC(1)
bq27743
UNIT
YAH (DSBGA)
15 PINS
RθJCtop
Junction-to-case (top) thermal resistance
17
°C/W
RθJB
Junction-to-board thermal resistance
20
°C/W
ψJT
Junction-to-top characterization parameter
1
°C/W
ψJB
Junction-to-board characterization parameter
18
°C/W
RθJCbot
Junction-to-case (bottom) thermal resistance
NA
°C/W
7.5 Power-On Reset
TA = 25°C, CREG25 = 1.0 µF, and VVPWR = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIT+
Increasing battery voltage input at VREG25
2.09
2.20
2.31
V
VHYS
Power-on reset hysteresis
45
115
185
mV
(1)
LDO output current, IOUT, is the sum of internal and external load currents.
(2)
Assured by characterization. Not production tested.
7.6
2.5-V LDO Regulator
(1)
TA = 25°C, CREG25 = 1.0 µF, and VVPWR = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VREG25
Regulator output voltage
2.8 V
≤ VVPWR ≤ 4.5 V,
IOUT
(1) ≤ 16 mA
TA = –40°C to
85°C
2.3
2.5
2.6
V
2.45 V
≤ VVPWR < 2.8 V (low
battery),
IOUT
(1) ≤ 3 mA
2.3
V
ISHORT
(2)
Short-circuit current limit
VREG25 = 0 V
TA = –40°C to
85°C
250
mA
7.7 Charger Attachment and Removal Detection
TA = 25°C, CREG25 = 1.0 µF, and VVPWR = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VCHGATT
Voltage threshold for charger attachment
detection
2.7
3.0
V
VCHGREM
Voltage threshold for charger removal
detection
0.5
1.0
V
(1)
Assured by characterization. Not production tested.
7.8 CHG and DSG FET Drive
TA = 25°C, CREG25 = 1.0 µF, and VVPWR = 3.6 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VFETON
CHG and DSG FETs on
IL = 1 µA
TA = –40°C to 85°C
2 × VVPWR – 0.4
2 × VVPWR – 0.2
2 × VVPWR
V
VFETOFF
CHG and DSG FETs off
TA = –40°C to 85°C
0.2
V
VFETRIPPLE
(1)
CHG and DSG FETs on
IL = 1 µA
TA = –40°C to 85°C
0.1
VPP
tFETON
FET gate rise time
(10% to 90%)
CL = 4 nF
TA = –40°C to 85°C
No series resistance
67
140
218
μs
tFETOFF
FET gate fall time
(90% to 10%)
CL = 4 nF
TA = –40°C to 85°C
No series resistance
10
30
60
μs




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