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TP0101K 数据表(PDF) 1 Page - Vishay Siliconix |
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TP0101K 数据表(HTML) 1 Page - Vishay Siliconix |
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1 / 1 page Specification Comparison Vishay Siliconix Document Number 74071 www.vishay.com 11-May-05 TP0101K vs. TP0101T Description: P-Channel,20-V (D-S) MOSFET, Low Threshold Package: SOT-23 Pin Out: Identical Part Number Replacements: TP0101K-T1-E3 Replaces TP0101T-T1-E3 TP0101K-T1-E3 Replaces TP0101T-T1 Summary of Performance: The TP0101K is a technology upgrade with ESD protection to the original TP0101T. The ESD protection diodes on the gate increases Gate-Body Leakage; otherwise, there is little variation regarding performance. ABSOLUTE MAXIMUM RATINGS (TA = 25oC UNLESS OTHERWISE NOTED) Parameter Symbol TP0101K TP0101T Unit Drain-Source Voltage VDS -20 -20 Gate-Source Voltage VGS +8 +8 V TA = 25°C -0.58 -0.6 Continuous Drain Current TA = 70°C ID -0.46 -0.48 Pulsed Drain Current IDM -2 -3 Continuous Source Current (MOSFET Diode Conduction) IS -0.3 -0.6 A TA = 25°C 0.35 0.35 Power Dissipation TA = 70°C PD 0.22 0.22 W Operating Junction & Storage Temperature Range Tj & Tstg -55 to 150 -55 to 150 °C Maximum Junction-to-Ambient RthJA 357 357 °C/W SPECIFICATIONS (TJ = 25OC UNLESS OTHERWISE NOTED) TP0101K TP0101T Parameter Symbol Min Typ Max Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) -0.5 -0.7 -1.0 -0.5 -0.9 -1.5 V Gate-Body Leakage IGSS +5000 +100 nA Zero Gate Voltage Drain Current IDSS -1 -1 µA VGS = -4.5 V -1.2 -2.5 On-State Drain Current VGS = -2.5 V ID(on) -0.5 -0.5 A VGS= -4.5 V 0.42 0.65 0.45 0.65 Drain-Source On-Resistance VGS = -2.5 V rDS(on) 0.64 0.85 0.69 0.85 Ω Forward Transconductance gfs 1300 1300 S Diode Forward Voltage VSD -0.9 -1.2 -0.9 -1.2 V Dynamic Total Gate Charge Qg 1400 2200 2020 3000 Gate-Source Charge Qgs 300 180 Gate-Drain Charge Qgd 250 720 nC Gate Resistance Rg 150 NS Ω Switching a td(on) 25 35 7 12 Turn-On Time tr 30 45 25 35 td(off) 55 85 19 30 Turn-Off Time tf 38 60 9 15 ns NS denotes not specified in original datasheet |
类似零件编号 - TP0101K |
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类似说明 - TP0101K |
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