MMP60R190PE datasheet(3/10 Pages) MGCHIP

部件名	MMP60R190PE

功能描述	600V 0.190ohm N-channel MOSFET

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制造商	MGCHIP [MagnaChip Semiconductor.]

网页	http://www.magnachip.co.kr

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MMP60R190PE Datasheet

Jan. 2018 Revision 1.0

MagnaChip Semiconductor Ltd.

4

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain

– Source

Breakdown voltage

V(BR)DSS

600

-

V

VGS = 0V, ID = 0.25mA

Gate Threshold Voltage

VGS(th)

2

3

4

V

VDS = VGS, ID = 0.25mA

Zero Gate Voltage

Drain Current

IDSS

-

1

uA

VDS = 600V, VGS = 0V

Gate Leakage Current

IGSS

-

100

nA

VGS = ±30V, VDS = 0V

Drain-Source On

State Resistance

RDS(ON)

-

0.17

0.19

Ω

VGS = 10V, ID = 7.3A

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Input Capacitance

Ciss

-

1630

-

pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

-

1250

-

Reverse Transfer Capacitance

Crss

-

74

-

Effective Output Capacitance

Energy Related

(4)

Co(er)

-

39

-

VDS = 0V to 480V,

VGS = 0V, f = 1.0MHz

Turn On Delay Time

td(on)

-

32

-

ns

VGS = 10V, RG = 25Ω,

VDS = 300V, ID = 20A

Rise Time

tr

-

73

-

Turn Off Delay Time

td(off)

-

146

-

Fall Time

tf

-

47

-

Total Gate Charge

Qg

-

51

-

nC

VGS = 10V, VDS = 480V,

ID = 20A

Gate

– Source Charge

Qgs

-

12

-

Gate

– Drain Charge

Qgd

-

19

-

Gate Resistance

RG

-

3.0

-

Ω

VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

 Static Characteristics (T

c=25

oC unless otherwise specified)

 Dynamic Characteristics (T

c=25

oC unless otherwise specified)

类似零件编号 - MMP60R190PE

制造商	部件名	数据表	功能描述
MagnaChip Semiconductor...	MMP60R190P	1Mb / 10P	600V 0.19(ohm) N-channel MOSFET
MagnaChip Semiconductor...	MMP60R190PTH	1Mb / 10P	600V 0.19(ohm) N-channel MOSFET
Inchange Semiconductor ...	MMP60R190PTH	266Kb / 2P	isc N-Channel MOSFET Transistor

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