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MT46V256M4 数据表(PDF) 24 Page - Micron Technology |
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MT46V256M4 数据表(HTML) 24 Page - Micron Technology |
24 / 74 page 1Gb: x4, x8, x16 DDR SDRAM PRELIMINARY 09005aef8076894f Micron Technology, Inc., reserves the right to change products or specifications without notice. 1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN 24 ©2003 Micron Technology. Inc. Figure 14: Random READ Accesses NOTE: 1. DO n (or x or b or g) = data-out from column n (or column x or column b or column g). 2. Burst length = 2, 4 or 8 (if 4 or 8, the following burst interrupts the previous). 3. n' or x' or b' or g' indicates the next data-out following DO n or DO x or DO b or DO g, respectively. 4. READs are to an active row in any bank. 5. Shown with nominal tAC, tDQSCK, and tDQSQ. CK CK# COMMAND READ READ READ NOP NOP ADDRESS Bank, Col n Bank, Col x Bank, Col b Bank, Col x Bank, Col b READ Bank, Col g COMMAND ADDRESS CL = 2 CK CK# COMMAND ADDRESS DQ DQS CL = 2.5 DQ DQS DO n DO x' DO g DO n' DO b DO x DO b' DO n DO x' DO n' DO b DO x DO b' T0 T1 T2 T3 T2n T3n T4 T5 T4n T5n READ READ READ NOP NOP Bank, Col n READ Bank, Col g T0 T1 T2 T3 T2n T3n T4 T5 T4n T5n DON’T CARE TRANSITIONING DATA |
类似零件编号 - MT46V256M4 |
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类似说明 - MT46V256M4 |
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