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SI5905DC-T1 数据表(PDF) 2 Page - Vishay Siliconix |
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SI5905DC-T1 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si5905DC Vishay Siliconix www.vishay.com 2-2 Document Number: 71066 S-21251—Rev. B, 05-Aug-02 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS =VGS,ID = --250 mA --0.45 V Gate-Body Leakage IGSS VDS =0 V, VGS = 8V 100 nA Zero Gate Voltage Drain Current IDSS VDS =--6.4 V, VGS =0 V --1 mA Zero Gate Voltage Drain Current IDSS VDS =--6.4 V, VGS =0 V, TJ =85_C --5 mA On-State Drain Currenta ID(on) VDS --5 V, VGS =--4.5 V --10 A VGS =--4.5 V, ID =--3 A 0.075 0.090 Drain-Source On-State Resistancea rDS(on) VGS =--2.5 V, ID =--2.5 A 0.110 0.130 Ω DS(on) VGS =--1.8 V, ID =--1.0 A 0.150 0.180 Forward Transconductancea gfs VDS =--5 V, ID =--3 A 7 S Diode Forward Voltagea VSD IS =--0.9 A, VGS =0 V --0.8 --1.2 V Dynamicb Total Gate Charge Qg 5.5 9 Gate-Source Charge Qgs VDS =--4 V, VGS =--4.5 V, ID =--3 A 0.5 nC Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 10 15 Rise Time tr VDD =--4 V,RL =4 Ω 45 70 Turn-Off Delay Time td(off) VDD = --4 V, RL = 4 Ω ID ≅ --1 A, VGEN =--4.5 V, RG =6 Ω 30 45 ns Fall Time tf 10 15 Source-Drain Reverse Recovery Time trr IF = --0.9 A, di/dt = 100 A/ms 30 60 Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS = 5 thru3V TC =--55_C 125_C 25_C Output Characteristics Transfer Characteristics VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) 1.5 V 2V 2.5 V 1V |
类似零件编号 - SI5905DC-T1 |
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类似说明 - SI5905DC-T1 |
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