N02L163WN1AT datasheet(11/11 Pages) NANOAMP

部件名	N02L163WN1AT

功能描述	2Mb Ultra-Low Power Asynchronous CMOS SRAM

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制造商	NANOAMP [NanoAmp Solutions, Inc.]

网页	http://www.nanoamp.com

标志

11 / 11 page

(DOC# 14-02-014 REV L ECN# 01-1000)

11

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

NanoAmp Solutions, Inc.

N02L163WN1A

Ordering Information

NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.

NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-

poses only and they vary depending upon specific applications.

NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application

or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp

product may be expected to result in significant injury or death, including life support systems and critical medical instruments.

Revision History

Revision #

Date

Change Description

A

Dec. 1999

Initial Preliminary Release

B

Sept. 2000

Modified Voltage Range and Standby Current Limits.

C

Oct. 2000

Added Missing Tas Parameter Specification.

D

Oct. 2000

Modified Standby Current Specifications.

E

Jan. 2001

Extensive Modification to use voltage regulator design

F

Mar. 2001

Modified BGA pinout, access time 70ns @ 2.7V, misc. errata

G

May 2001

Changed access time to 55ns, modified 44-Lead TSOP Package diagram

H

June 2001

Revised voltage range in Timing table, revised Dimensions table

I

Sept. 2001

Minor parametric modifications, full production release

J

Dec. 2001

Part number change from EM128L16, modified Overview and Features, added

Page Mode Operation diagram, revised Operating Characteristics table, Package

diagram, Functional Description table and Ordering Information diagram

K

Nov. 2002

Replaced Isb and Icc on Product Family table with typical values

L

Oct. 2004

Added Pb-Free and Green Package Option

N02L163WN1AX-XX X

I = Industrial, -40°C to 85°C

55 = 55ns

T = 44-pin TSOP II

B = 48-ball BGA

T2 = 44-pin TSOP II Green Package

B1 = 48-ball BGA Pb-Free Package

Temperature

Performance

Package Type

类似零件编号 - N02L163WN1AT

制造商	部件名	数据表	功能描述
NanoAmp Solutions, Inc.	N02L163WC2A	264Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit
	N02L163WC2AB	264Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit
	N02L163WC2AB2	264Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit
	N02L163WC2AT	264Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit
	N02L163WC2AT2	264Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit

More results

类似说明 - N02L163WN1AT

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ON Semiconductor	N02L6181A	636Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit July 2008 - Rev. 4
NanoAmp Solutions, Inc.	N02L1618C1A	261Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit
ON Semiconductor	N02L63W3A	664Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16bit July 2008 - Rev. 15
NanoAmp Solutions, Inc.	N02M083WL1A	212Kb / 9P	2Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx8 bit
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ON Semiconductor	N02L83W2A	174Kb / 10P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 횞 8 bit July 2008 - Rev. 8
NanoAmp Solutions, Inc.	N02L163WC2A	264Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit
NanoAmp Solutions, Inc.	N02L083WC2A	223Kb / 10P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
ON Semiconductor	N02L63W2A	659Kb / 11P	2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 횞 16 bit July 2008 - Rev. 9