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ISL97687 数据表(PDF) 6 Page - Renesas Technology Corp

部件名 ISL97687
功能描述  4-Channel LED Driver with Phase Shift Control and 10-Bit Dimming Resolution
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

ISL97687 数据表(HTML) 6 Page - Renesas Technology Corp

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ISL97687
FN7714 Rev.3.00
Page 6 of 24
Sep 13, 2017
Absolute Maximum Ratings (T
A = +25°C)
Thermal Information
VIN, EN, PWMI, ACTL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 45V
VDC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 5.75V
VLOGIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 2.75V
COMP, ISET1, ISET2, PWM_SET,
OSC, CS, OVP. . . . . . . . . . . . . . . . . . . . . . .-0.3V to min (VDC+0.3V, 5.75V)
EN_VSYNC, CSEL. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 5.75V
STV, EN_ADIM, EN_PS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 5.75V
CH1 - CH4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 75V
GD, SLEW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 18V
PGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Above voltage ratings are all with respect to AGND pin
ESD Rating
Human Body Model (Tested per JESD22-A114F) . . . . . . . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115C) . . . . . . . . . . . . . . . . . . 200V
Charged Device Model (JESD22-C101E) . . . . . . . . . . . . . . . . . . . . . . . 1kV
Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . 100mA
Thermal Resistance
JA (°C/W) JC (°C/W)
28 Ld TQFN (4 layer + vias, Notes 5, 6) . . .
32
4
28 Ld SOIC (4 layer, Notes 7, 8) . . . . . . . . .
54
25
Thermal Characterization (Typical, Note 9)
PSIJT (°C/W)
28 Ld TQFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
28 Ld SOIC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Maximum Continuous Junction Temperature . . . . . . . . . . . . . . . . .+125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Power Dissipation
TQFN (W)
SOIC (W)
TA < +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.13
1.85
TA < +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.72
1.02
TA < +85°C . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.25
0.74
TA < +105°C . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.63
0.37
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-40°C to +105°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
5.
JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
6. For
JC, the “case temp” location is the center of the exposed metal pad on the package underside.
7. For
JC, the “case temp” location is taken at the package top center.
8.
JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
9. PSIJT is the PSI junction-to-top thermal characterization parameter. If the package top temperature can be measured with this rating then the die
junction temperature can be estimated more accurately than the
JC and JC thermal resistance ratings.
Electrical Specifications All specifications below are characterized at T
A = -40°C to +105°C; VIN = 12V, EN = 5V. Boldface limits apply
over the operating temperature range, -40°C to +105°C.
PARAMETER
DESCRIPTION
CONDITION
MIN
(Note 10)TYP
MAX
(Note 10)UNIT
GENERAL
VIN
Backlight Supply Voltage
(Note 11)
932
V
IVIN_STBY
VIN Shutdown Current
EN = 0
5
µA
IVIN_ACTIVE
Switching
RFPWM = 3.3kΩ,
ILED = 100mA,
fSW = 600kHz,
COUT_SW = 1nF
10
13
mA
Non-switching
4
5.5
mA
VUVLO
Undervoltage Lock-out Threshold
2.9
3.3
V
VUVLO_HYS
Undervoltage Lock-out Hysteresis
300
mV
LINEAR REGULATOR
VDC
5V Analog Bias Regulator
VIN > 6V
4.8
5
5.1
V
VDC_DROP
VDC LDO Load Regulation Tolerance
IVDC = 30mA
71
100
mV
VLOGIC
2.5V Logic Bias Regulator
VIN > 6V
2.3
2.4
2.5
V
VLOGIC_DROP
VLOGIC LDO Load Regulation Tolerance
IVLOGIC = 30mA
31
100
mV
BOOST SWITCH CONTROLLER
tSS
Soft-Start
16
ms
ISW_LIMIT
Boost FET Current Limit (See Equation 5)RSENSE = 50mΩ
3.1
3.4
3.8
A
tR
Gate Rise Time
COUT_SW = 1000pF
20
ns
tF
Gate Falling Time
COUT_SW = 1000pF
17.6
ns
VGD
Gate Driver Output Voltage
COUT_SW = 1000pF
10
V


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