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CAT24FC64UITE13REV-D 数据表(PDF) 2 Page - Catalyst Semiconductor

部件名 CAT24FC64UITE13REV-D
功能描述  64K-Bit I2C Serial CMOS EEPROM
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制造商  CATALYST [Catalyst Semiconductor]
网页  http://www.catalyst-semiconductor.com
标志 CATALYST - Catalyst Semiconductor

CAT24FC64UITE13REV-D 数据表(HTML) 2 Page - Catalyst Semiconductor

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CAT24FC64
2
Doc. No. 1046, Rev. G
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55
°C to +125°C
Storage Temperature ....................... –65
°C to +150°C
Voltage on Any Pin with
Respect to Ground(1) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
*COMMENT
Stresses above those listed under “Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions
outside of those listed in the operational sections of this specification is not
implied. Exposure to any absolute maximum rating for extended periods
may affect device performance and reliability.
Note:
(1) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC + 2.0V for periods of less than 20ns.
(2) Output shorted for no more than one second. No more than one output shorted at a time.
(3) This parameter is tested initially and after a design or process change that affects the parameter.
(4) Latch-up protection is provided for stresses up to 100 mA on address and data pins from –1V to VCC +1V.
(5) Standby current (ISB ) = 10 µA max at extended temperature range.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current - Read
fSCL = 100 KHz
1
mA
VCC=5V
ICC2
Power Supply Current - Write
fSCL = 400KHz
3
mA
VCC=5V
ISB(5)
Standby Current
VIN = GND or VCC
1
µA
VCC=5V
ILI
Input Leakage Current
VIN = GND to VCC
1
µA
ILO
Output Leakage Current
VOUT = GND to VCC
1
µA
VIL
Input Low Voltage
-0.5
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage (VCC = +3.0V)
IOL = 3.0 mA
0.4
V
VOL2
Output Low Voltage (VCC = +1.8V)
IOL = 1.5 mA
0.5
V
RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Typ
Max
Units
NEND(3)
Endurance
MIL-STD-883, Test Method 1033 1,000,000
Cycles/Byte
TDR(3)
Data Retention
MIL-STD-883, Test Method 1008
100
Years
VZAP(3)
ESD Susceptibility
MIL-STD-883, Test Method 3015
4000
Volts
ILTH(3)(4)
Latch-up
JEDEC Standard 17
100
mA
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
Conditions
Min
Typ
Max
Units
CI/O(3)
Input/Output Capacitance (SDA)
VI/O = 0V
8
pF
CIN(3)
Input Capacitance (SCL, WP, A0, A1)
VIN = 0V
6
pF
ZWPL
WP Input Impedance
VIN ≤ 0.5V
5
70
k
ZWPH
WP Input Impedance
VIN>0.7VxVCC
500
k
D.C. OPERATING CHARACTERISTICS
VCC = +1.8V to +5.5V, unless otherwise specified.
Package Power Dissipation
Capability (Ta = 25
°C)................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300
°C
Output Short Circuit Current(2) ........................ 100mA


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