FP50R12KE3 datasheet(1/11 Pages) INFINEON

部件名	FP50R12KE3

功能描述	IGBT-Module

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制造商	INFINEON [Infineon Technologies AG]

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TechnischeInformation/TechnicalInformation

FP50R12KE3

IGBT-Module

IGBT-modules

preparedby:AS

approvedby:RS

dateofpublication:2013-10-02

revision:3.1

IGBT,Wechselrichter/IGBT,Inverter

HöchstzulässigeWerte/MaximumRatedValues

Kollektor-Emitter-Sperrspannung

Collector-emittervoltage

Tvj = 25°C

VCES

1200

V

Kollektor-Dauergleichstrom

ContinuousDCcollectorcurrent

TC = 80°C, Tvj max = 150°C

TC = 25°C, Tvj max = 150°C

IC nom

IC

50

75

A

PeriodischerKollektor-Spitzenstrom

Repetitivepeakcollectorcurrent

tP = 1 ms

ICRM

100

A

Gesamt-Verlustleistung

Totalpowerdissipation

TC = 25°C, Tvj max = 150

Ptot

280

W

Gate-Emitter-Spitzenspannung

Gate-emitterpeakvoltage

VGES

+/-20

V

CharakteristischeWerte/CharacteristicValues

min.

typ.

max.

Kollektor-Emitter-Sättigungsspannung

Collector-emittersaturationvoltage

IC = 50 A, VGE = 15 V

VCE sat

1,70

2,00

2,15

V

Tvj = 25°C

Tvj = 125°C

Gate-Schwellenspannung

Gatethresholdvoltage

IC = 2,00 mA, VCE = VGE, Tvj = 25°C

VGEth

5,0

5,8

6,5

V

Gateladung

Gatecharge

VGE = -15 V ... +15 V

QG

0,47

µC

InternerGatewiderstand

Internalgateresistor

Tvj = 25°C

RGint

4,0

Ω

Eingangskapazität

Inputcapacitance

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cies

3,50

nF

Rückwirkungskapazität

Reversetransfercapacitance

f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V

Cres

0,13

nF

Kollektor-Emitter-Reststrom

Collector-emittercut-offcurrent

VCE = 1200 V, VGE = 0 V, Tvj = 25°C

ICES

5,0

mA

Gate-Emitter-Reststrom

Gate-emitterleakagecurrent

VCE = 0 V, VGE = 20 V, Tvj = 25°C

IGES

400

nA

Einschaltverzögerungszeit,induktiveLast

Turn-ondelaytime,inductiveload

IC = 50 A, VCE = 600 V

VGE = ±15 V

RGon = 18

Ω

td on

0,09

µs

Tvj = 25°C

Tvj = 125°C

Anstiegszeit,induktiveLast

Risetime,inductiveload

IC = 50 A, VCE = 600 V

VGE = ±15 V

RGon = 18

Ω

tr

0,03

0,05

µs

Tvj = 25°C

Tvj = 125°C

Abschaltverzögerungszeit,induktiveLast

Turn-offdelaytime,inductiveload

IC = 50 A, VCE = 600 V

VGE = ±15 V

RGoff = 18

Ω

td off

0,42

0,52

µs

Tvj = 25°C

Tvj = 125°C

Fallzeit,induktiveLast

Falltime,inductiveload

IC = 50 A, VCE = 600 V

VGE = ±15 V

RGoff = 18

Ω

tf

0,07

0,09

µs

Tvj = 25°C

Tvj = 125°C

EinschaltverlustenergieproPuls

Turn-onenergylossperpulse

IC = 50 A, VCE = 600 V, LS = 45 nH

VGE = ±15 V

RGon = 18

Ω

Eon

4,90

6,60

mJ

Tvj = 25°C

Tvj = 125°C

AbschaltverlustenergieproPuls

Turn-offenergylossperpulse

IC = 50 A, VCE = 600 V, LS = 45 nH

VGE = ±15 V

RGoff = 18

Ω

Eoff

4,00

5,80

mJ

Tvj = 25°C

Tvj = 125°C

Kurzschlußverhalten

SCdata

VGE

≤ 15 V, VCC = 900 V

VCEmax = VCES -LsCE ·di/dt

ISC

200

A

Tvj = 125°C

tP

≤ 10 µs,

Wärmewiderstand,ChipbisGehäuse

Thermalresistance,junctiontocase

proIGBT/perIGBT

RthJC

0,45

K/W

TemperaturimSchaltbetrieb

Temperatureunderswitchingconditions

Tvj op

-40

125

°C

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