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TPD1032F 数据表(PDF) 4 Page - Toshiba Semiconductor

部件名 TPD1032F
功能描述  Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
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制造商  TOSHIBA [Toshiba Semiconductor]
网页  http://www.semicon.toshiba.co.jp/eng
标志 TOSHIBA - Toshiba Semiconductor

TPD1032F 数据表(HTML) 4 Page - Toshiba Semiconductor

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TPD1032F
2006-10-31
4
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
DC
20
Drain-source voltage
Pulse
VDS
40
V
Drain current
ID
Internally limited
A
Input voltage
VIN
−0.3 to 7
V
Single-device operation (Note4a)
PD(1)
0.95
Power dissipation
(Ta=25℃)(Note 3a)
Single-device value at dual
operation (Note4b)
PD(2)
0.54
Single-device operation (Note4a)
PD(3)
0.38
Power dissipation
(Ta=25℃)(Note 3b)
Single-device value at dual
operation (Note4b)
PD(4)
0.20
W
Single pulse active clamp capability (Note 5)
EAS
90
mJ
Active clamp current
IAR
3
A
Repetitive active clamp capability
(Note 6)
EAR
54
μ
J
Operating temperature
Topr
−40 to 110
°C
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 4a)
Rth (ch-a)(1)
132
Thermal resistance,
channel
to ambient
(Note3a) Single-device value at
dual operation (Note 4b)
Rth (ch-a)(2)
231
°C/W
Single-device operation
(Note 4a)
Rth (ch-a)(1)
330
Thermal resistance,
channel
to ambient
(Note3b) Single-device value at
dual operation (Note 4b)
Rth (ch-a)(2)
625
°C/W
Note 3:
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
a) Device mounted on a glass-epoxy board (a)
b) Device mounted on a glass-epoxy board (b)


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