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SI3909DV 数据表(PDF) 2 Page - Vishay Siliconix |
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SI3909DV 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 3 page Vishay Siliconix SPICE Device Model Si3909DV SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = − 250 µA 1.1 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −4.5 V 14 A VGS = −4.5 V, ID = − 1.8 A 0.18 0.16 VGS = −3.6 V, ID = −1.6 A 0.19 0.19 Drain-Source On-State Resistance a rDS(on) VGS = −2.5 V, ID = −1 A 0.25 0.28 Ω Forward Transconductance a gfs VDS = −10 V, ID = −1.8 A 3.6 3.6 S Diode Forward Voltage a VSD IS = −1.05 A, VGS = 0 V −0.78 −0.83 V Dynamic b Total Gate Charge Qg 2.5 2.7 Gate-Source Charge Qgs 0.40 0.40 Gate-Drain Charge Qgd VDS = −10 V, VGS = −4.5 V, ID = −1.8 A 0.60 0.60 nC Turn-On Delay Time td(on) 10 11 Rise Time tr 8 34 Turn-Off Delay Time td(off) 52 19 Fall Time tf VDD = −10 V, RL = 10 Ω ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω 7 24 Source-Drain Reverse Recovery Time trr IF = −1.05 A, di/dt = 100 A/µs 20 20 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 71511 S-50836 Rev. B, 16-May-05 |
类似零件编号 - SI3909DV |
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类似说明 - SI3909DV |
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