IRFB4410/IRFS4410/IRFSL4410

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3

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 2. Typical Output Characteristics

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

4.5V

≤60µs PULSE WIDTH

Tj = 175°C

VGS

TOP

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM

4.5V

2

3

4

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 25°C

TJ = 175°C

VDS = 25V

≤60µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

3.0

ID = 58A

VGS = 10V

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

0

20

40

60

80

100

120

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VDS= 80V

VDS= 50V

VDS= 20V

ID= 58A

0.1

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

VGS

TOP

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM

4.5V

≤60µs PULSE WIDTH

Tj = 25°C

4.5V