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1N4590R 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

部件名 1N4590R
功能描述  Silicon Standard Recovery Diode
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制造商  GENESIC [GeneSiC Semiconductor, Inc.]
网页  http://www.genesicsemi.com/
标志 GENESIC - GeneSiC Semiconductor, Inc.

1N4590R 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  1N4590R Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. 1N4590R Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. 1N4590R Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 200 V - 800 V
IF =150 A
Features
• High Surge Capability
DO-8 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N4588(R)
1N4590(R)
Unit
Repetitive peak reverse voltage
VRRM
200
400
V
• Types from 200 V to 800 V VRRM
Silicon Standard
Recovery Diode
Conditions
800
1N4588(R) thru 1N4593(R)
1N4593(R)
600
1N4592(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
2. Reverse polarity (R): Stud is anode.
pp
g
DC blocking voltage
VDC
200
400
V
Continuous forward current
IF
150
150
A
I2t for fusing
I2t
60 Hz Half wave
37200
37200
A
2sec
Operating temperature
Tj
-55 to 150
-55 to 150
°C
Storage temperature
Tstg
-55 to 150
-55 to 150
°C
Parameter
Symbol
1N4588(R)
1N4590(R)
Unit
Diode forward voltage
1.5
1.5
Thermal characteristics
Thermal resistance, junction -
case
RthJC
0.35
0.35
°C/W
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150
-55 to 150
TC = 25 °C, tp = 8.3 ms
800
600
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
1N4593(R)
1N4592(R)
0.35
0.35
1.5
1.5
IF = 150 A, Tj = 110 °C
TC ≤ 110 °C
Conditions
3000
3000
-55 to 150
150
150
-55 to 150
A
3000
Reverse current
IR
VF
3000
VR = VRRM, Tj = 110 °C
9.5
9
6.5
5.5
mA
37200
37200
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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