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ISL25700FRUZ-T7A 数据表(PDF) 10 Page - Renesas Technology Corp

部件名 ISL25700FRUZ-T7A
功能描述  Programmable Temperature Controlled MOSFET Driver
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

ISL25700FRUZ-T7A 数据表(HTML) 10 Page - Renesas Technology Corp

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ISL25700
FN6885 Rev 1.00
Page 10 of 18
July 23, 2014
Principles of Operation
The ISL25700 allows for precisely controlling the temperature
of an external object and/or power dissipation of the external
P-MOSFET. The temperature control is done by continuously
sensing resistance of the NTC thermistor, and adjusting the
current flow through the P-MOSFET (temperature controlling
element).
ISL25700 drives the P-MOSFET proportionally inverted to the
difference between the object temperature and target
temperature set point (TSET), set by the user through the I2C
serial interface. Temperature is sensed by the external NTC
thermistor and converted to a driving voltage by the
Wheatstone bridge and its amplifier. One leg of the current-
mode Wheatstone bridge contains an external NTC thermistor
with the programmable 8-bit FTC DAC and another leg
contains the selectable current source k1 that feeds an
internal resistor RINT.
The 8-bit FTC DAC allows fine-tuning the TSET with resolution better
than +0.1°C within a +15°C coarse temperature range window. The
TSET temperature is set through the Temperature Coarse Range
Control Register, Reg.01h[2:0], and the Fine Temperature Control
Register, Reg.02h[7:0]; refer to “ISL25700 MEMORY MAP” on
page 11. A +15°C temperature coarse range window can be
centered on TSET point based on the thermistor’s parameters, such
as resistance, R/T curve type, tolerance and NTC slope and by
adjusting a current ratio flowing through the legs of the Wheatstone
bridge. Note that the TSET target temperature should be higher than
the anticipated maximum ambient temperature for the application.
There are total of 32 system gain settings available in the Gain
Control Register, Reg.03h[4:0], with 0.35dB resolution per
step. The gain control allows to prevent the thermal system
from oscillation by adjusting the total system gain remotely,
without use of external components.
The internal current sensing circuitry provides the ability to
control and adjust the power dissipated in the P-MOSFET
through the Current Sense Register, Reg.01h[7:3]. This
function allows for adjusting the initial turn on heating curve
and protects from over-heating of the P-MOSFET. An external
current sensing resistor RSENSE, serial with the P-MOSFET, is
required. A current limit can be selected for the chosen RSENSE.
It should have an effective voltage drop from 200mV to
1750mV and be inside the safe operating area of the MOSFET.
A General Purpose 8-bit DAC, GP DAC provides a programmable
voltage output VDAC through the General Purpose DAC Register,
Reg.04h[7:0]. The output swing of General Purpose DAC can be set
through the Gain Control bit in Reg.03h[6] or totally disabled by
resetting the DAC Enable Bit in Reg.03h[7].
Memory Map
The are two types of memory banks in the chip; volatile (RAM)
and non-volatile (EEPROM). Volatile registers from address
00h to 07h are identical to non-volatile registers in terms of
the register’s name and bit definitions. All the data is recalled
from non-volatile registers and maintained in the volatile
registers at power-up. It is possible to do independent
write/read to the volatile and non-volatile banks after
power-up by setting NV bit in the Control/Status Register,
Reg.08h[7]. Note that the data written to the non-volatile
registers will be automatically written to corresponding volatile
registers, however no direct reading from non-volatile registers
is possible. All the readings are from corresponding volatile
registers.
The Memory Map of the chip is in Table 1.
FIGURE 12. GP DAC GAIN ERROR
Typical Performance Curves (Continued)
-0.5
-0.3
-0.1
0.1
0.3
0.5
5
55
105
155
205
255
CODE (DECIMAL)
VDD = 5V
VDD = 15V


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