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HLDD15N10 数据表(PDF) 1 Page - Kersemi Electronic Co., Ltd. |
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HLDD15N10 数据表(HTML) 1 Page - Kersemi Electronic Co., Ltd. |
1 / 5 page HLDD15N10 201 7 . H1.0 Page 1 www.hldic.com Marking and pin assignment N-Channel MOSFET N-Channel Enhancement Mode Power MOSFET Description The HLDD15N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application □ Powerswitchingapplication □ Hard switched and highfrequencycircuits □ Uninterruptiblepowersupply Features □ VDS =100V,ID =15A □ RDS(ON):110mΩ@VGS=10V □ Low gatecharge. □ Greendeviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON) . □ Excellentpackageforgoodheatdissipation. Absolute Maximum Ratings (TC=25℃unless otherwise noted) Thermal Characteristic Symbol Parameter Ratings Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- 15 A Continuous Drain Current-T C =100 ℃ 10.5 EAS Single Pulse Avalanche Energy2 280 mJ PD Power Dissipation 48 W TJ, TSTG Operating and Storage Junction Temperature Range -55~+150 ℃ Symbol Parameter Ratings Units RƟJC Thermal Resistance,Junction to Case 2.8 ℃/W RƟJA Thermal Resistance,Junction to Ambient4 110 |
类似零件编号 - HLDD15N10 |
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类似说明 - HLDD15N10 |
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