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S34ML01G1 Datasheet(数据表) 1 Page - Cypress Semiconductor

部件型号  S34ML01G1
说明  1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded
下载  71 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
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S34ML01G1 Datasheet(HTML) 1 Page - Cypress Semiconductor

 
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S34ML01G1
S34ML02G1
S34ML04G1
1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash
for Embedded
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document Number: 002-00676 Rev. *V
Revised March 20, 2018
Distinctive Characteristics
Density
1 Gb/ 2 Gb / 4 Gb
Architecture
Input / Output Bus Width: 8-bits / 16-bits
Page size:
• x8 = 2112 (2048 + 64) bytes; 64 bytes is spare area
• x16 = 1056 (1024 + 32) words; 32 words is spare area
Block size: 64 Pages
• x8 = 128 KB + 4 KB
• x16 = 64k + 2k words
Plane size:
•1 Gb / 2 Gb: 1024 Blocks per Plane
x8 = 128 MB + 4 MB
x16 = 64M + 2M words
•4 Gb: 2048 Blocks per Plane
x8 = 256 MB+ 8 MB
x16 = 128M + 4M words
Device size:
•1 Gb: 1 Plane per Device or 128 MB
•2 Gb: 2 Planes per Device or 256 MB
•4 Gb: 2 Planes per Device or 512 MB
NAND flash interface
Open NAND Flash Interface (ONFI) 1.0 compliant
Address, Data and Commands multiplexed
Supply voltage
3.3-V device: Vcc = 2.7 V ~ 3.6 V
Security
One Time Programmable (OTP) area
Hardware program/erase disabled during power transition
Additional features
2 Gb and 4 Gb parts support Multiplane Program and Erase
commands
Supports Copy Back Program
2 Gb and 4 Gb parts support Multiplane Copy Back Program
Supports Read Cache
Electronic signature
Manufacturer ID: 01h
Operating temperature
Industrial: -40 °C to 85 °C
Automotive: -40 °C to 105 °C
Performance
Page Read / Program
Random access: 25 µs (Max)
Sequential access: 25 ns (Min)
Program time / Multiplane Program time: 200 µs (Typ)
Block Erase (S34ML01G1)
Block Erase time: 2.0 ms (Typ)
Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1)
Block Erase time: 3.5 ms (Typ)
Reliability
100,000 Program / Erase cycles (Typ)
(with 1 bit ECC per 528 bytes (x8) or 264 words (x16))
10 Year Data retention (Typ)
For one plane structure (1-Gb density)
• Block zero is valid and will be valid for at least 1,000
program-erase cycles with ECC
For two plane structures (2-Gb and 4-Gb densities)
• Blocks zero and one are valid and will be valid for at least
1,000 program-erase cycles with ECC
Package options
Lead Free and Low Halogen
48-Pin TSOP 12  20  1.2 mm
63-Ball BGA 9  11  1 mm




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