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S34ML01G1 Datasheet(数据表) 63 Page - Cypress Semiconductor

部件型号  S34ML01G1
说明  1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded
下载  71 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
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S34ML01G1 Datasheet(HTML) 63 Page - Cypress Semiconductor

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Document Number: 002-00676 Rev. *V
Page 63 of 71
S34ML01G1
S34ML02G1
S34ML04G1
*D
XILA
05/31/2012
Global:
Data Sheet designation updated from Advance Information to Preliminary
Distinctive Characteristics/Performance:
Updated Distinctive Characteristics and Performance section
Pin Description:
Updated Pin Description table
Addressing:
Updated Address Cycle Map — 1 Gb Device table
Updated Address Cycle Map — 2 Gb Device table
Updated Address Cycle Map — 4 Gb Device table
Command Set:
Updated Command Set table
*E
XILA
07/13/2012
Performance:
Corrected Page Read/Program - Sequential access: from 25ns (Max) to 25 ns
(Min)
Connection Diagram:
Corrected figure: 48-Pin TSOP1 Contact x8 Device
Mode Selection:
Mode selection table: corrected Busy Time in Read, WE# from High to X;
corrected Notes
Command Set:
Command Set table: added ONFI, Extended Read Status, and Read ID2
commands
Note that all ONFI information is in the Advanced Information designation
Copy Back Program:
Updated section
Multiplane Copy Back Program — S34ML02G1 and S34ML04G1:
Updated section
Read ID2:
Added section
Read ONFI Signature:
Added Section
Note that all ONFI information is in the Advanced Information designation
Read Parameter Page:
Added section
Note that all ONFI information is in the Advanced Information designation
One-Time Programmable (OTP) Entry:
Added section
Note that all ONFI information is in the Advanced Information designation
Program/Erase Characteristics:
Added note to table
Timing Diagrams:
Rearranged section
Added timing diagrams: Multiplane Block Erase (ONFI 1.0 Protocol), Multiplane
Cache Program (ONFI 1.0 Protocol), Read ID2 Operation Timing, ONFI
Signature Timing, Read Parameter Page Timing, Read ID2 Operation Timing,
OTP Entry Timing
Updated timing diagrams: Page Read Operation (Read One Page), Page Read
Operation Intercepted by CE#, Page Read Operation Timing with CE# Don’t
Care, Page Program Operation, Page Program Operation Timing with CE#
Don’t Care, Random Data Input, Random Data Output, Multiplane Page
Program, Block Erase Operation (Erase One Block), Reset Operation Timing,
Read Cache Operation Timing, Cache Program, Multiplane Cache Program,
Read ID Operation Timing
Note that all ONFI information is in the Advanced Information designation
11. Document History Page (Continued)
Document Title: S34ML01G1/S34ML02G1/S34ML04G1, 1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded
Document Number: 002-00676
Rev.
ECN No.
Orig. of
Change
Submission
Date
Description of Change




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