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S34ML01G1 Datasheet(数据表) 38 Page - Cypress Semiconductor

部件型号  S34ML01G1
说明  1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded
下载  71 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
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S34ML01G1 Datasheet(HTML) 38 Page - Cypress Semiconductor

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Document Number: 002-00676 Rev. *V
Page 38 of 71
S34ML01G1
S34ML02G1
S34ML04G1
6. Timing Diagrams
6.1
Command Latch Cycle
Command Input bus operation is used to give a command to the memory device. Commands are accepted with Chip Enable low,
Command Latch Enable High, Address Latch Enable low, and Read Enable High and latched on the rising edge of Write Enable.
Moreover for commands that starts a modify operation (write/ erase) the Write Protect pin must be high.
Figure 12. Command Latch Cycle
6.2
Address Latch Cycle
Address Input bus operation allows the insertion of the memory address. To insert the 27 (×8 Device) addresses needed to access
the 1 Gb, four write cycles are needed. Addresses are accepted with Chip Enable low, Address Latch Enable High, Command Latch
Enable low, and Read Enable High and latched on the rising edge of Write Enable. Moreover, for commands that start a modify
operation (write/ erase) the Write Protect pin must be high.
Figure 13. Address Latch Cycle
tCLS
tCS
tWP
Command
CLE
CE#
WE#
ALE
I/Ox
tDH
tDS
tALS
tALH
tCLH
tCH
= Don’t Care
tCLS
tCS
tWC
tALS
tALS
tALS
tALS
tALS
tALH
tALH
tALH
tALH
tWC
tWC
tWC
tWP
tWP
tWH
tWP
tWP
tWH
tWH
tWH
tDS
Col.
Add1
CLE
CE#
WE#
ALE
I/Ox
tDS
tDS
tDS
tDS
tDH
tDH
tDH
tDH
tDH
Col.
Add2
Row.
Add2
Row.
Add1
Row.
Add3
tALH
= Don’t Care




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