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S34ML01G1 Datasheet(数据表) 37 Page - Cypress Semiconductor

部件型号  S34ML01G1
说明  1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded
下载  71 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
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S34ML01G1 Datasheet(HTML) 37 Page - Cypress Semiconductor

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Document Number: 002-00676 Rev. *V
Page 37 of 71
S34ML01G1
S34ML02G1
S34ML04G1
5.8
Thermal Resistance
Note
37. Test conditions follow standard methods and procedures for measuring thermal impedance in accordance with EIA/JESD51.
5.9
Program / Erase Characteristics
Notes
38. Typical program time is defined as the time within which more than 50% of the whole pages are programmed (VCC = 3.3V, 25°C).
39. Copy Back Read and Copy Back Program for a given plane must be between odd address pages or between even address pages for the device to meet the program
time (tPROG) specification. Copy Back Program may not meet this specification when copying from an odd address page (source page) to an even address page (target
page) or from an even address page (source page) to an odd address page (target page).
Table 22. Thermal Resistance
Parameter
Symbol
TS048
VBM063
VBT067
Unit
Theta JA
Thermal Resistance
(Junction to Ambient)
40
39
39
°C/W
Table 23. Program / Erase Characteristics
Parameter
Description
Min
Typ
Max
Unit
Program Time / Multiplane Program Time [39]
tPROG
200
700
µs
Dummy Busy Time for Multiplane Program (S34ML02G1, S34ML04G1)
tDBSY
—0.5
1
µs
Cache Program short busy time (S34ML02G1, S34ML04G1)
tCBSYW
—5
tPROG
µs
Number of partial Program Cycles in the same page
Main + Spare
NOP
4
Cycle
Block Erase Time / Multiplane Erase Time (S34ML02G1, S34ML04G1)
tBERS
—3.5
10
ms
Block Erase Time (S34ML01G1)
tBERS
—2
3
ms
Read Cache busy time
tCBSYR
—3
tR
µs




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