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S34ML01G1 Datasheet(数据表) 35 Page - Cypress Semiconductor

部件型号  S34ML01G1
说明  1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded
下载  71 Pages
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制造商  CYPRESS [Cypress Semiconductor]
网页  http://www.cypress.com
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S34ML01G1 Datasheet(HTML) 35 Page - Cypress Semiconductor

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Document Number: 002-00676 Rev. *V
Page 35 of 71
S34ML01G1
S34ML02G1
S34ML04G1
5.5
AC Characteristics
Notes
28. The time to Ready depends on the value of the pull-up resistor tied to R/B# pin.
29. If Reset Command (FFh) is written at Ready state, the device goes into Busy for maximum 5 µs.
30. CE# low to high or RE# low to high can be at different times and produce three cases. Depending on which signal comes high first, either tCOH or tRHOH will be met.
31. During data output, tCEA depends partly on tCR (CE# low to RE# low). If tCR exceeds the minimum value specified, then the maximum time for tCEA may also be exceeded
(tCEA = tCR + tREA).
Table 20. AC Characteristics
Parameter
Symbol
Min
Max
Unit
ALE to RE# delay
tAR
10
ns
ALE hold time
tALH
5—
ns
ALE setup time
tALS
10
ns
Address to data loading time
tADL
70
ns
CE# low to RE# low
tCR
10
ns
CE# hold time
tCH
5—
ns
CE# high to output High-Z
tCHZ
—30
ns
CLE hold time
tCLH
5—
ns
CLE to RE# delay
tCLR
10
ns
CLE setup time
tCLS
10
ns
CE# access time
tCEA [31]
—25
ns
CE# high to output hold
tCOH [30]
15
ns
CE# high to ALE or CLE don't care
tCSD
10
ns
CE# setup time
tCS
20
ns
Data hold time
tDH
5—
ns
Data setup time
tDS
10
ns
Data transfer from cell to register
tR
—25
µs
Output High-Z to RE# low
tIR
0—
ns
Read cycle time
tRC
25
ns
RE# access time
tREA
—20
ns
RE# high hold time
tREH
10
ns
RE# high to output hold
tRHOH [30]
15
ns
RE# high to WE# low
tRHW
100
ns
RE# high to output High-Z
tRHZ
—100
ns
RE# low to output hold
tRLOH
5—
ns
RE# pulse width
tRP
12
ns
Ready to RE# low
tRR
20
ns
Device resetting time (Read/Program/Erase)
tRST
5/10/500
µs
WE# high to busy
tWB
—100
ns
Write cycle time
tWC
25
ns
WE# high hold time
tWH
10
ns
WE# high to RE# low
tWHR
60
ns
WE# pulse width
tWP
12
ns
Write protect time
tWW
100
ns




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