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KFG1216D2A-DEB6 数据表(PDF) 4 Page - Samsung semiconductor |
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KFG1216D2A-DEB6 数据表(HTML) 4 Page - Samsung semiconductor |
4 / 114 page OneNAND512(KFG1216x2A-xxB5) FLASH MEMORY 4 Revision History Revision No. 1.0 Remark Final Draft Date May. 17, 2005 History 1. Corrected the errata 2. Added Data Protection flow chart. 3. Removed Cache Read Operation. 4. Added additional information on command register. 5. Revised Interrupt status register information. 6. Added INT pin schematic. 7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us. 8. Revised AC/DC parameters 9. Revised ECC Bypass Description. 10. Revised Reset Parameters and Timing Diagrams. |
类似零件编号 - KFG1216D2A-DEB6 |
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类似说明 - KFG1216D2A-DEB6 |
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