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SEMICONDUCTOR

TECHNICAL DATA

KTX512T

EPITAXIAL PLANAR PNP TRANSISTOR

SCHOTTKY BARRIER TYPE DIODE

Revision No : 1

DC/DC CONVERTER APPLICATIONS.

FEATURES

Composite type with a PNP transistor and a Schottky barrier diode

contained in one package facilitating high-density mounting.

The KTX512T is formed with two chips, one being equivalent to

the KTA1535T and the other the KDR411S, encapsulated in one packages.

Ultrasmall package facilitates miniaturization in end products

(mounting height 0.7 ).

DIM MILLIMETERS

A

B

D

E

TS6

2.9 0.2

1.6+0.2/-0.1

0.70 0.05

0.4 0.1

2.8+0.2/-0.3

1.9 0.2

0.95

0.16 0.05

0.00-0.10

0.25+0.25/-0.15

C

F

G

H

I

J

K0.60

L0.55

K

K

B

E

H

J

J

2

3

5

16

4

+_

+_

+_

+_

+_

1. Q EMITTER

2. Q BASE

3. D ANODE

4. Q , D COMMON (COLLECTOR, CATHODE)

5. Q , D COMMON (COLLECTOR, CATHODE)

6. Q , D COMMON (COLLECTOR, CATHODE)

1

1

1

1

1

11

11

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

-20

V

Collector-Emitter Voltage

-20

V

Emitter-Base Voltage

-5

V

Collector Current

DC

-3

A

Pulse

-5

A

Base Current

600

mA

Collector Power Dissipation

0.9

W

Junction Temperature

150

Storage Temperature Range

-55 150

* Package mounted on a ceramic board (600

0.8 )

12

3

6

54

Q1

D1

EQUIVALENT CIRCUIT (TOP VIEW)

Type Name

Marking

Lot No.

D B

12

3

65

4

MAXIMUM RATING (Ta=25 )

CHARACTERISTIC

SYMBOL

RATING

UNIT

Peak Reverse Voltage

40

V

DC Reverse Voltage

20

V

Average Output Current

0.5

A

Peak Forward Surge Current

3

A

Junction Temperature

125

Storage Temperature Range

-40 125