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GS74108J-10 数据表(PDF) 1 Page - List of Unclassifed Manufacturers

部件名 GS74108J-10
功能描述  512K x 8 4Mb Asynchronous SRAM
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制造商  ETC [List of Unclassifed Manufacturers]
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标志 ETC - List of Unclassifed Manufacturers

GS74108J-10 数据表(HTML) 1 Page - List of Unclassifed Manufacturers

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Rev: 1.06 7/2000
1/12
© 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
512K x 8
4Mb Asynchronous SRAM
8, 10, 12, 15ns
3.3V VDD
Center VDD & VSS
SOJ, TSOP
Commercial Temp
Industrial Temp
Features
• Fast access time: 8, 10, 12, 15ns
• CMOS low power operation: 150/125/110/90 mA at min. cycle time.
• Single 3.3V ± 0.3V power supply
• All inputs and outputs are TTL compatible
• Fully static operation
• Industrial Temperature Option: -40° to 85°C
• Package line up
J: 400mil, 36 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
Description
The GS74108 is a high speed CMOS static RAM organized as
524,288-words by 8-bits. Static design eliminates the need for exter-
nal clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74108 is avail-
able in 400 mil SOJ and 400 mil TSOP Type-II packages.
Pin Descriptions
SOJ 512K x 8 Pin Configuration
Symbol
Description
A0 to A18
Address input
DQ1 to DQ8
Data input/output
CE
Chip enable input
WE
Write enable input
OE
Output enable input
VDD
+3.3V power supply
VSS
Ground
NC
No connect
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A4
A3
A2
A1
A0
CE
DQ1
DQ2
VDD
VSS
DQ3
DQ4
WE
A17
A16
A15
NC
A5
A6
A7
A8
OE
DQ8
DQ7
VSS
VDD
DQ6
DQ5
A9
A10
A11
A12
36 pin
400mil SOJ
17
18
A14
A13
20
19
NC
A18


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