IPAN80R360P7 datasheet(4/13 Pages) INFINEON

部件名	IPAN80R360P7

功能描述	800V CoolMOS짧 P7 Power Transistor

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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4 / 13 page

4

800VCoolMOSªP7PowerTransistor

IPAN80R360P7

Rev.2.1,2018-02-07

Final Data Sheet

3Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

800

-

V

VGS=0V,ID=1mA

Gate threshold voltage

VGS(th)

2.5

3

3.5

V

VDS=VGS,ID=0.28mA

Zero gate voltage drain current

IDSS

-

10

1

-

µA

VDS=800V,VGS=0V,Tj=25°C

VDS=800V,VGS=0V,Tj=150°C

Gate-source leakage curent incl. zener

diode

IGSS

-

1

µA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

0.31

0.80

0.36

-

Ω

VGS=10V,ID=5.6A,Tj=25°C

VGS=10V,ID=5.6A,Tj=150°C

Gate resistance

RG

-

1

-

Ω

f=250kHz,opendrain

Table5Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

930

-

pF

VGS=0V,VDS=500V,f=250kHz

Output capacitance

Coss

-

16

-

pF

VGS=0V,VDS=500V,f=250kHz

Effective output capacitance, energy

Co(er)

-

27

-

pF

VGS=0V,VDS=0to500V

Effective output capacitance, time

Co(tr)

-

336

-

pF

ID=constant,VGS=0V,VDS=0to500V

Turn-on delay time

td(on)

-

10

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=5.3

Ω

Rise time

tr

-

6

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=5.3

Ω

Turn-off delay time

td(off)

-

40

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=5.3

Ω

Fall time

tf

-

6

-

ns

VDD=400V,VGS=13V,ID=5.6A,

RG=5.3

Ω

Table6Gatechargecharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

4

-

nC

VDD=640V,ID=5.6A,VGS=0to10V

Gate to drain charge

Qgd

-

13

-

nC

VDD=640V,ID=5.6A,VGS=0to10V

Gate charge total

Qg

-

30

-

nC

VDD=640V,ID=5.6A,VGS=0to10V

Gate plateau voltage

Vplateau

-

4.5

-

V

VDD=640V,ID=5.6A,VGS=0to10V

1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to500V

2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to500V

类似零件编号 - IPAN80R360P7

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPAN80R280P7	963Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-07
Infineon Technologies A...	IPAN80R450P7	943Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-07

More results

类似说明 - IPAN80R360P7

制造商	部件名	数据表	功能描述
Infineon Technologies A...	IPD80R280P7	977Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.0,2016-07-05
	IPS80R1K2P7	968Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-07
	IPS80R900P7	958Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-07
	IPN80R4K5P7	1Mb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-07
	IPN80R1K4P7	1Mb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-09
	IPN80R900P7	1Mb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-09
	IPW80R360P7	956Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.1,2018-02-12
	IPU80R1K4P7	1Mb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.0,2016-07-05
	IPP80R450P7	974Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.0,2016-07-05
	IPP80R280P7	973Kb / 13P	800V CoolMOS짧 P7 Power Transistor Rev.2.0,2016-07-05

More results

IPAN80R360P7 数据表(PDF) 4 Page - Infineon Technologies AG

IPAN80R360P7 数据表(HTML) 4 Page - Infineon Technologies AG

类似零件编号 - IPAN80R360P7

类似说明 - IPAN80R360P7

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IPAN80R360P7 数据表(PDF) 4 Page - Infineon Technologies AG

IPAN80R360P7 数据表(HTML) 4 Page - Infineon Technologies AG

类似零件编号 - IPAN80R360P7

类似说明 - IPAN80R360P7

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