OMH315 datasheet(1/4 Pages) ETC

部件名	OMH315

功能描述	DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE

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制造商	ETC [List of Unclassifed Manufacturers]

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2.1

OMH310

OMH315

Dual 50 Volt, 15 And 20 Amp H-Bridge

With Current And Temperature Sensing

In A Low Profile Plastic Package

4 11 R0

DUAL, LOW VOLTAGE, LOW RDS(on), MOSFET

H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE

FEATURES

• H-Bridge Configuration

• Zener Gate Protection

• 10 m Shunt Resistor

• 2 Linear Thermal Sensors, One For Each Bridge

• Isolated Package

• Output Currents Up To 20 Amps

DESCRIPTION

This series of MOSFET switches is configured as a Dual H-Bridge with common VDD

lines, precision series shunt resistor in the source line, and sensing elements to

monitor the substrate temperature of each switch. This device is ideally suited for

Stepping Motor Control applications where size, performance, and efficiency are key.

MAXIMUM RATINGS (TC = @ 25°C)

Part

VDS

RDS(on)

ID

Package

Number

(Volts)

(m )

(Amps)

OMH310

50

100

15

MP-3

OMH315

50

70

20

MP-3

ABSOLUTE MAXIMUM RATINGS (TC = @ 25°C unless otherwise noted)

Parameter

OMH310

OMH315

Units

Drain Source Voltage, VDS

50

V

Drain-Gate (RGS = 1m ), VDGR

50

V

Continuous Drain Current, ID @ TC = 25°C

15

25

A

Continuous Drain Current, ID @ TC = 70°C

11

16

A

Pulse Drain Current, IDM (1)

56

100

A

Maximum Power Dissipation, PD @ TC = 25°C (2)

20

50

W

Maximum Power Dissipation, PD @ TC = 70°C (2)

1 1

18

W

Linear Derating Factor, Junction-To-Case

0 . 2

0.33

W/C

Thermal Resistance, Junction-To-Case

5.0

3.0

°C/W

Notes:

(1) Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. (2) Maximum Junction Temperature = 125°C.

类似零件编号 - OMH315

制造商	部件名	数据表	功能描述
OPTEK Technologies	OMH3150	109Kb / 4P	Ratiometric Linear Hall-effect Sensor
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OPTEK Technologies	OMH3150B	109Kb / 4P	Ratiometric Linear Hall-effect Sensor
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OPTEK Technologies	OMH3150S	109Kb / 4P	Ratiometric Linear Hall-effect Sensor

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