IRF250P224 datasheet(5/17 Pages) INFINEON

部件名	IRF250P224

功能描述	IR MOSFET - StrongIRFET?

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制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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5 / 17 page

Final Datasheet

2017-02-27

IR MOSFET-StrongIRFET™

IRF250P224

5

V1.0

D

S

G

Table 6

Dynamic characteristics

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Forward Trans conductance

gfs

VDS = 50V, ID =58A

112

-

S

Total Gate Charge

Qg

-

135

203

nC

Gate-to-Source Charge

Qgs

-

48

-

Gate-to-Drain Charge

Qgd

-

25

-

Total Gate Charge Sync. (Qg– Qgd)

Qsync

-

110

-

Turn-On Delay Time

td(on)

VDD = 125V

-

25

-

ns

Rise Time

tr

ID = 58A

-

70

-

Turn-Off Delay Time

td(off)

RG= 2.7

-

77

-

Fall Time

tf

VGS = 10V

-

58

-

Input Capacitance

Ciss

VGS = 0V

-

9915

-

pF

Output Capacitance

Coss

VDS = 50V

-

1026

-

Reverse Transfer Capacitance

Crss

ƒ = 1.0MHz, See Fig.7

-

8.3

-

Effective Output Capacitance

(Energy Related)

Cosseff.(ER)

VGS = 0V, VDS = 0V to 200V 

-

725

-

Output Capacitance (Time Related)

Cosseff.(TR)

VGS = 0V, VDS = 0V to 200V 

-

1171

-

ID = 58A

VDS = 125V

VGS = 10V

Table 7

Reverse Diode

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Continuous Source Current

IS

MOSFET symbol

-

96

A

(Body Diode)

showing the

Pulsed Source Current

integral reverse

-

384

(Body Diode) 

p-n junction diode.

Diode Forward Voltage

VSD

TJ = 25°C, IS= 58A,VGS = 0V 

-

1.2

V

Peak Diode Recovery dv/dt 

dv/dt

TJ = 175°C, IS = 58A,VDS = 250V

-

24

-

V/ns

Reverse Recovery Time

trr

TJ = 25°C

-

149

-

ns

TJ = 125°C

-

227

-

Reverse Recovery Charge

Qrr

TJ = 25°C

-

487

-

nC

TJ = 125°C

-

1289

-

Reverse Recovery Current

IRRM

TJ = 25°C

-

4.8

-

A

ISM

VDD = 125V

IF = 58A,

di/dt = 100A/µs 

Table 5

Static characteristics

Parameter

Symbol

Conditions

Values

Unit

Min.

Typ. Max.

Drain-to-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 1mA

250

-

V

Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2.5mA 

-

0.14

-

V/°C

Static Drain-to-Source On-Resistance

RDS(on)

VGS = 10V, ID = 58A

-

9.0

12

m

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 270µA

2.0

-

4.0

V

Drain-to-Source Leakage Current

IDSS

VDS =200V, VGS =0V

-

1.0

µA

VDS =200V,VGS = 0V,TJ =125°C

-

100

Gate-to-Source Forward Leakage

IGSS

VGS = 20V

-

100

nA 

Gate Resistance

RG

-

1.3

-



3

Electrical characteristics

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