数据搜索系统,热门电子元器件搜索 |
|
IRF250P224 数据表(PDF) 5 Page - Infineon Technologies AG |
|
IRF250P224 数据表(HTML) 5 Page - Infineon Technologies AG |
5 / 17 page Final Datasheet 2017-02-27 IR MOSFET-StrongIRFET™ IRF250P224 5 V1.0 D S G Table 6 Dynamic characteristics Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward Trans conductance gfs VDS = 50V, ID =58A 112 - - S Total Gate Charge Qg - 135 203 nC Gate-to-Source Charge Qgs - 48 - Gate-to-Drain Charge Qgd - 25 - Total Gate Charge Sync. (Qg– Qgd) Qsync - 110 - Turn-On Delay Time td(on) VDD = 125V - 25 - ns Rise Time tr ID = 58A - 70 - Turn-Off Delay Time td(off) RG= 2.7 - 77 - Fall Time tf VGS = 10V - 58 - Input Capacitance Ciss VGS = 0V - 9915 - pF Output Capacitance Coss VDS = 50V - 1026 - Reverse Transfer Capacitance Crss ƒ = 1.0MHz, See Fig.7 - 8.3 - Effective Output Capacitance (Energy Related) Cosseff.(ER) VGS = 0V, VDS = 0V to 200V - 725 - Output Capacitance (Time Related) Cosseff.(TR) VGS = 0V, VDS = 0V to 200V - 1171 - ID = 58A VDS = 125V VGS = 10V Table 7 Reverse Diode Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous Source Current IS MOSFET symbol - - 96 A (Body Diode) showing the Pulsed Source Current integral reverse - - 384 (Body Diode) p-n junction diode. Diode Forward Voltage VSD TJ = 25°C, IS= 58A,VGS = 0V - - 1.2 V Peak Diode Recovery dv/dt dv/dt TJ = 175°C, IS = 58A,VDS = 250V - 24 - V/ns Reverse Recovery Time trr TJ = 25°C - 149 - ns TJ = 125°C - 227 - Reverse Recovery Charge Qrr TJ = 25°C - 487 - nC TJ = 125°C - 1289 - Reverse Recovery Current IRRM TJ = 25°C - 4.8 - A ISM VDD = 125V IF = 58A, di/dt = 100A/µs Table 5 Static characteristics Parameter Symbol Conditions Values Unit Min. Typ. Max. Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1mA 250 - - V Breakdown Voltage Temp. Coefficient V(BR)DSS/TJ Reference to 25°C, ID = 2.5mA - 0.14 - V/°C Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 58A - 9.0 12 m Gate Threshold Voltage VGS(th) VDS = VGS, ID = 270µA 2.0 - 4.0 V Drain-to-Source Leakage Current IDSS VDS =200V, VGS =0V - - 1.0 µA VDS =200V,VGS = 0V,TJ =125°C - - 100 Gate-to-Source Forward Leakage IGSS VGS = 20V - - 100 nA Gate Resistance RG - 1.3 - 3 Electrical characteristics Electrical characteristics |
类似零件编号 - IRF250P224 |
|
类似说明 - IRF250P224 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |