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DG2032E 数据表(PDF) 3 Page - Vishay Siliconix |
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DG2032E 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 9 page DG2032E www.vishay.com Vishay Siliconix S17-0462-Rev. A, 27-Mar-17 3 Document Number: 78604 For technical questions, contact: analogswitchtechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Room = 25 °C, Full = as determined by the operating suffix b. Typical values are for design aid only, not guaranteed nor subject to production testing c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet d. Guarantee by design, not subjected to production test e. VIN = input voltage to perform proper function f. Difference of min. and max. values g. Guaranteed by 5 V testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 5 V) PARAMETER SYMBOL TEST CONDITIONS OTHERWISE UNLESS SPECIFIED V+ = 5 V, ± 10 %, VINL = 0.5 V, VINH = 2 V e TEMP. a LIMITS -40 °C to +85 °C UNIT MIN. c TYP. b MAX. c Analog Switch Analog signal range d VANALOG Full 0 - V+ V Drain-source on-resistance RDS(on) V+ = 4.5 V, VCOM = 0.8 V / 3.5 V; ICOM = 10 mA Room - 2.5 3.1 Full - - 4 On-resistance matching R DS(on) V+ = 4.5 V, VCOM = 0.8 V / 2.5 V / 3.5 V, ICOM = 10 mA Room - 0.01 0.4 Full - - 0.6 On-resistance flatness d, f Rflat(on) Room - 0.61 1 Full - - 1.5 Off leakage current g INC/NO(off) V+ = 5.5 V, VNC/NO = 1 V / 4.5 V, VCOM = 4.5 V / 1 V Room -2 0.15 2 nA Full -10 - 10 Channel-on leakage current g ICOM(on) V+ = 5.5 V, VCOM = VNC/NO = 1 V / 4.5 V Room -2 0.20 2 Full -10 - 10 Power down leakage d IPD V+ = 0 V, VCOM = 5.5 V, NC/NO open Full - 0.01 5 μA V+ = 0 V, VNC/NO = 5.5 V, COM, open Full - 0.01 3 mA Digital Control Input current d IINL or IINH Full -1 - 1 μA Input high voltage d VINH Full 2 - - V Input low voltage d VINL Full - - 0.5 Digital input capacitance d CIN Room - 3 - pF Dynamic Characteristics Turn-on time tON VNC/NO = 3 V, CL = 35 pF, RL = 300 Room - 13 40 ns Full - - 43 Turn-off time tOFF Room - 7 33 Full - - 35 Break-before-make time d tBBM Room 3 6 - Full 2 - - Propagation delay d tpd V+ = 5 V, no RL Room - 380 - ps Charge injection d QINJ CL = 1 nF, Vgen = 2.5 V, Rgen = 0 Room - -19.4 - pC Bandwidth d BW CL = 5 pF (set up capacitance) Room - 221 - MHz Off-isolation d OIRR RL = 50 , CL = 5 pF f = 1 MHz Room - -58 - dB f = 10 MHz Room - -43 - Channel-to-channel crosstalk d XTALK RL = 50 , CL = 5 pF f = 1 MHz Room - -62 - f = 10 MHz Room - -47 - NO, NC off capacitance d CNO(off) V+ = 5 V, f = 1 MHz Room - 7 - pF CNC(off) Room - 7 - Channel-on capacitance d CNO(on) Room - 23 - CNC(on) Room - 23 - Power Supply Power supply range V+ 4.5 - 5.5 V Power supply current d I+ V+ = 5.5 V, VIN = 0 V or 5.5 V Full - - 1 μA |
类似零件编号 - DG2032E |
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类似说明 - DG2032E |
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