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DG2032E 数据表(PDF) 3 Page - Vishay Siliconix

部件名 DG2032E
功能描述  2.5 , High Bandwidth, Dual SPDT Analog Switch
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

DG2032E 数据表(HTML) 3 Page - Vishay Siliconix

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DG2032E
www.vishay.com
Vishay Siliconix
S17-0462-Rev. A, 27-Mar-17
3
Document Number: 78604
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. VIN = input voltage to perform proper function
f. Difference of min. and max. values
g. Guaranteed by 5 V testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
PARAMETER
SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 5 V, ± 10 %, VINL = 0.5 V, VINH = 2 V e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN. c
TYP. b
MAX. c
Analog Switch
Analog signal range d
VANALOG
Full
0
-
V+
V
Drain-source on-resistance
RDS(on)
V+ = 4.5 V, VCOM = 0.8 V / 3.5 V; ICOM = 10 mA
Room
-
2.5
3.1
Full
-
-
4
On-resistance matching
R
DS(on)
V+ = 4.5 V, VCOM = 0.8 V / 2.5 V / 3.5 V,
ICOM = 10 mA
Room
-
0.01
0.4
Full
-
-
0.6
On-resistance flatness d, f
Rflat(on)
Room
-
0.61
1
Full
-
-
1.5
Off leakage current g
INC/NO(off)
V+ = 5.5 V, VNC/NO = 1 V / 4.5 V,
VCOM = 4.5 V / 1 V
Room
-2
0.15
2
nA
Full
-10
-
10
Channel-on leakage current g
ICOM(on)
V+ = 5.5 V, VCOM = VNC/NO = 1 V / 4.5 V
Room
-2
0.20
2
Full
-10
-
10
Power down leakage d
IPD
V+ = 0 V, VCOM = 5.5 V, NC/NO open
Full
-
0.01
5
μA
V+ = 0 V, VNC/NO = 5.5 V,
COM, open
Full
-
0.01
3
mA
Digital Control
Input current d
IINL or IINH
Full
-1
-
1
μA
Input high voltage d
VINH
Full
2
-
-
V
Input low voltage d
VINL
Full
-
-
0.5
Digital input capacitance d
CIN
Room
-
3
-
pF
Dynamic Characteristics
Turn-on time
tON
VNC/NO = 3 V, CL = 35 pF, RL = 300 
Room
-
13
40
ns
Full
-
-
43
Turn-off time
tOFF
Room
-
7
33
Full
-
-
35
Break-before-make time d
tBBM
Room
3
6
-
Full
2
-
-
Propagation delay d
tpd
V+ = 5 V, no RL
Room
-
380
-
ps
Charge injection d
QINJ
CL = 1 nF, Vgen = 2.5 V, Rgen = 0 
Room
-
-19.4
-
pC
Bandwidth d
BW
CL = 5 pF (set up capacitance)
Room
-
221
-
MHz
Off-isolation d
OIRR
RL = 50 , CL = 5 pF
f = 1 MHz
Room
-
-58
-
dB
f = 10 MHz
Room
-
-43
-
Channel-to-channel
crosstalk d
XTALK
RL = 50 , CL = 5 pF
f = 1 MHz
Room
-
-62
-
f = 10 MHz
Room
-
-47
-
NO, NC off capacitance d
CNO(off)
V+ = 5 V, f = 1 MHz
Room
-
7
-
pF
CNC(off)
Room
-
7
-
Channel-on capacitance d
CNO(on)
Room
-
23
-
CNC(on)
Room
-
23
-
Power Supply
Power supply range
V+
4.5
-
5.5
V
Power supply current d
I+
V+ = 5.5 V, VIN = 0 V or 5.5 V
Full
-
-
1
μA


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