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PESDXS2UQ 数据表(PDF) 2 Page - NXP Semiconductors |
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PESDXS2UQ 数据表(HTML) 2 Page - NXP Semiconductors |
2 / 13 page 2004 Apr 27 2 Philips Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series FEATURES • Uni-directional ESD protection of up to two lines • Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs • Low clamping voltage: V(CL)R = 20 V at Ipp =15A • Low reverse leakage current: IRM <1nA • ESD protection > 30 kV • IEC 61000-4-2; level 4 (ESD) • IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs. APPLICATIONS • Computers and peripherals • Communication systems • Audio and video equipment • High speed data lines • Parallel ports. DESCRIPTION Uni-directional double ESD protection diodes in a SOT663 plastic package. Designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. MARKING Note 1. * = p : made in Hong Kong. * = t : made in Malaysia. * = W : made in China. QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE(1) PESD3V3S2UQ *E1 PESD5V0S2UQ *E2 PESD12VS2UQ *E3 PESD15VS2UQ *E4 PESD24VS2UQ *E5 SYMBOL PARAMETER VALUE UNIT VRWM reverse stand-off voltage 3.3, 5, 12, 15 and 24 V Cd diode capacitance VR =0V; f = 1 MHz 200, 150, 38, 32 and 23 pF number of protected lines 2 PIN DESCRIPTION 1 cathode 1 2 cathode 2 3 common anode sym022 2 1 3 1 2 3 001aaa732 Fig.1 Simplified outline (SOT663) and symbol. |
类似零件编号 - PESDXS2UQ |
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类似说明 - PESDXS2UQ |
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