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PESDXS2UQ 数据表(PDF) 2 Page - NXP Semiconductors

部件名 PESDXS2UQ
功能描述  Double ESD protection diodes in SOT663 package
Download  13 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

PESDXS2UQ 数据表(HTML) 2 Page - NXP Semiconductors

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2004 Apr 27
2
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp =15A
• Low reverse leakage current: IRM <1nA
• ESD protection > 30 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs.
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT663
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE(1)
PESD3V3S2UQ
*E1
PESD5V0S2UQ
*E2
PESD12VS2UQ
*E3
PESD15VS2UQ
*E4
PESD24VS2UQ
*E5
SYMBOL
PARAMETER
VALUE
UNIT
VRWM
reverse stand-off
voltage
3.3, 5, 12, 15
and 24
V
Cd
diode capacitance
VR =0V;
f = 1 MHz
200, 150, 38, 32
and 23
pF
number of
protected lines
2
PIN
DESCRIPTION
1
cathode 1
2
cathode 2
3
common anode
sym022
2
1
3
1
2
3
001aaa732
Fig.1 Simplified outline (SOT663) and symbol.


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