Si1330EDL datasheet(2/9 Pages) VISHAY

部件名	Si1330EDL

功能描述	N-Channel 60 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Document Number: 72861

S10-0721-Rev. B, 29-Mar-10

Vishay Siliconix

Si1330EDL

Notes:

a. Pulse test: PW

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

a

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 10 µA

60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1

2.0

2.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 10 V

± 1

µA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

1

VDS = 60 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currentb

ID(on)

VGS = 10 V, VDS = 7.5 V

0.5

A

VGS = 4.5 V, VDS = 10 V

0.4

VGS = 3 V, VDS = 10 V

0.05

Drain-Source On-Resistanceb

RDS(on)

VGS = 10 V, ID = 0.25 A

1.0

2.5

Ω

VGS = 4.5 V, ID = 0.2 A

1.4

3

VGS = 3 V, ID = 0.025 A

3.0

8

Forward Transconductanceb

gfs

VDS = 10 V, ID = 0.25 A

350

mS

Diode Forward Voltage

VSD

IS = 0.23 A, VGS = 0 V

0.83

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V

ID ≅ 0.25 A

0.4

0.6

nC

Gate-Source Charge

Qgs

0.11

Gate-Drain Charge

Qgd

0.15

Gate Resistance

Rg

173

Ω

Turn-On Time

td(on)

VDD = 30 V, RL = 150 Ω

ID ≅ 0.2 A, VGEN = 10 V

Rg = 10 Ω

3.8

10

ns

tr

4.8

15

Turn-Off Time

td(off)

12.8

20

tf

9.6

15

Output Characteristics

0.0

0.2

0.4

0.6

0.8

1.0

012345

VDS - Drain-to-Source Voltage (V)

VGS = 10 V, 7 V

3 V

5 V

4 V

6 V

Transfer Characteristics

012345

VGS - Gate-to-Source Voltage (V)

TJ = - 55 °C

125 °C

25 °C

1.0

0.8

0.6

0.2

0

0.4

类似零件编号 - Si1330EDL

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1330EDL	84Kb / 5P	N-Channel 60-V (D-S) MOSFET S-40853-Rev. A, 03-May-04
	SI1330EDL	234Kb / 4P	N-Channel 60-V (D-S) MOSFET Rev. A, 21-Feb-05
	SI1330EDL	99Kb / 5P	N-Channel 60 V (D-S) MOSFET Rev. B, 29-Mar-10
Vishay Telefunken	SI1330EDL	224Kb / 9P	N-Channel 60 V (D-S) MOSFET
Vishay Siliconix	SI1330EDL	227Kb / 9P	N-Channel 60 V (D-S) MOSFET 08-Feb-17

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类似说明 - Si1330EDL

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