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CY621472GN 数据表(PDF) 14 Page - Cypress Semiconductor |
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CY621472GN 数据表(HTML) 14 Page - Cypress Semiconductor |
14 / 20 page Document Number: 002-10624 Rev. *D Page 14 of 20 CY62147GN/CY621472GN MoBL® Figure 12. Write Cycle No. 4 (BHE/BLE Controlled)[32, 33, 34] Switching Waveforms (continued) DATAIN VALID ADDRESS CE WE DATA I/O tWC tSCE tAW tSA tBW tHA tHD tHZWE tSD BHE/ BLE tPWE tLZWE Notes 32. For all dual chip enable devices, CE is the logical combination of CE1 and CE2. When CE1 is LOW and CE2 is HIGH, CE is LOW; when CE1 is HIGH or CE2 is LOW, CE is HIGH. 33. The internal write time of the memory is defined by the overlap of WE = VIL, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must refer to the edge of the signal that terminates the write. 34. Data I/O is in a HI-Z state if CE = VIH, or OE = VIH or BHE, and/or BLE = VIH. |
类似零件编号 - CY621472GN |
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类似说明 - CY621472GN |
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