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SI7858BDP_17 Datasheet(数据表) 1 Page - Vishay Siliconix

部件型号  SI7858BDP
说明  N-Channel 12 V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SI7858BDP Datasheet(HTML) 1 Page - Vishay Siliconix

 
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Vishay Siliconix
Si7858BDP
New Product
Document Number: 66589
S10-1045-Rev. A, 03-May-10
www.vishay.com
1
N-Channel 12 V (D-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Low
Output
Voltage,
High
Current
Synchronous
Rectifiers
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
a
Qg (Typ.)
12
0.0025 at VGS = 4.5 V
40
56 nC
0.0030 at VGS = 2.5 V
40
0.0037 at VGS = 1.8 V
40
Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK® SO-8
Bottom View
N-Channel MOSFET
G
D
S
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
12
V
Gate-Source Voltage
VGS
± 8
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
40a
A
TC = 70 °C
40a
TA = 25 °C
33b, c
TA = 70 °C
26b, c
Pulsed Drain Current
IDM
70
Continuous Source-Drain Diode Current
TC = 25 °C
IS
40a
TA = 25 °C
4.5b, c
Single Pulse Avalanche Current
L = 0.1 mH
IAS
20
Single Pulse Avalanche Energy
EAS
20
mJ
Maximum Power Dissipation
TC = 25 °C
PD
48
W
TC = 70 °C
31
TA = 25 °C
5.0b, c
TA = 70 °C
3.2b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)d, e
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
t
≤ 10 s
RthJA
20
25
°C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
2.1
2.6




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