SI7858BDP_17 datasheet(1/13 Pages) VISHAY

部件名	SI7858BDP

功能描述	N-Channel 12 V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7858BDP

New Product

Document Number: 66589

S10-1045-Rev. A, 03-May-10

www.vishay.com

1

N-Channel 12 V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Low

Output

Voltage,

High

Current

Synchronous

Rectifiers

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

a

Qg (Typ.)

12

0.0025 at VGS = 4.5 V

40

56 nC

0.0030 at VGS = 2.5 V

40

0.0037 at VGS = 1.8 V

40

Ordering Information: Si7858BDP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK® SO-8

Bottom View

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 65 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

12

V

Gate-Source Voltage

VGS

± 8

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

40a

A

TC = 70 °C

40a

TA = 25 °C

33b, c

TA = 70 °C

26b, c

Pulsed Drain Current

IDM

70

Continuous Source-Drain Diode Current

TC = 25 °C

IS

40a

TA = 25 °C

4.5b, c

Single Pulse Avalanche Current

L = 0.1 mH

IAS

20

Single Pulse Avalanche Energy

EAS

20

mJ

Maximum Power Dissipation

TC = 25 °C

PD

48

W

TC = 70 °C

31

TA = 25 °C

5.0b, c

TA = 70 °C

3.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

≤ 10 s

RthJA

20

25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.1

2.6

类似零件编号 - SI7858BDP_17

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI7858BDP-T1-GE3	515Kb / 13P	N-Channel 12 V (D-S) MOSFET Rev. A, 03-May-10
	SI7858BDP-T1-GE3	361Kb / 13P	N-Channel 12 V (D-S) MOSFET 01-Jan-2022
	SI7858BDP	361Kb / 13P	N-Channel 12 V (D-S) MOSFET 01-Jan-2022

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