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SI2318DS_17 Datasheet(数据表) 3 Page - Vishay Siliconix

部件型号  SI2318DS
说明  N-Channel 40-V (D-S) MOSFET
下载  8 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SI2318DS Datasheet(HTML) 3 Page - Vishay Siliconix

   
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Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
www.vishay.com
3
Vishay Siliconix
Si2318DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
0.00
0.02
0.04
0.06
0.08
0
4
8
121620
ID - Drain Current (A)
VGS = 10 V
VGS = 4.5 V
0
2
4
6
8
10
02468
10
12
VDS = 20 V
ID = 3.9 A
Qg - Total Gate Charge (nC)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
1
0.1
VSD - Source-to-Drain Voltage (V)
TJ = 150 °C
TJ = 25 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
200
400
600
800
0
8
16
24
32
40
VDS - Drain-to-Source Voltage (V)
Coss
Ciss
Crss
0.5
0.8
1.1
1.4
1.7
2.0
- 50
- 25
0
25
50
75
100
125
150
VGS = 10 V
ID = 3.9 A
TJ - Junction Temperature (°C)
0.00
0.04
0.08
0.12
0.16
0.20
02468
10
ID = 3.9 A
VGS - Gate-to-Source Voltage (V)




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