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SI2318DS_17 Datasheet(数据表) 4 Page - Vishay Siliconix

部件型号  SI2318DS
说明  N-Channel 40-V (D-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
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SI2318DS Datasheet(HTML) 4 Page - Vishay Siliconix

   
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Document Number: 72322
S09-0130-Rev. B, 02-Feb-09
Vishay Siliconix
Si2318DS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72322.
Threshold Voltage
- 0.8
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Temperature (°C)
Single Pulse Power
0.01
0
1
10
4
6
100
600
0.1
Time (s)
2
8
10
TA = 25 °C
Safe Operating Area, Junction-to-Case
VDS - Drain-to-Source Voltage (V)
100
1.0
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
10 ms
100 ms
10 µs
100 µs
1 ms
1 s, 10 s
100 s, DC
*VGS > minimum VGS at which RDS(on) is specified
Limited by RDS(on)*
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-3
10-2
1
10
600
10-1
10-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 166 °C/W
3. T JM - TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM




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