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Si1013X 数据表(PDF) 2 Page - Vishay Siliconix

部件名 Si1013X
功能描述  P-Channel 1.8 V (G-S) MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

Si1013X 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 71167
S10-2432-Rev. D, 25-Oct-10
Vishay Siliconix
Si1013R/X
Notes:
a. Pulse test; pulse width
 300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
For the following graphs, P-Channel negative polarities for all voltage and current values are represented as positive values.
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.45
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 1
± 2
µA
Zero Gate Voltage Drain Current
IDSS
VDS = - 16 V, VGS = 0 V
- 0.3
- 100
nA
VDS = - 16 V, VGS = 0 V, TJ = 85 °C
- 5
µA
On-State Drain Currenta
ID(on)
VDS = - 5 V, VGS = - 4.5 V
- 700
mA
Drain-Source On-State
Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 350 mA
0.8
1.2
VGS = - 2.5 V, ID = - 300 mA
1.2
1.6
VGS = - 1.8 V, ID = - 150 mA
1.8
2.7
Forward Transconductancea
gfs
VDS= - 10 V, ID = - 250 mA
0.4
S
Diode Forward Voltagea
VSD
IS = - 150 mA, VGS = 0 V
- 0.8
- 1.2
V
Dynamicb
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 4.5 V, ID = - 250 mA
1500
pC
Gate-Source Charge
Qgs
150
Gate-Drain Charge
Qgd
450
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 47 
ID  - 200 mA, VGEN = - 4.5 V, Rg = 10 
5
ns
Rise Time
tr
9
Turn-Off Delay Time
td(off)
35
Fall Time
tf
11
Output Characteristics
0.0
0.2
0.4
0.6
0.8
1.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 5 V thru 3 V
2 V
VDS - Drain-to-Source Voltage (V)
1.8 V
2.5 V
Transfer Characteristics
0
200
400
600
800
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TJ = - 55 °C
125 °C
25 °C
VGS - Gate-to-Source Voltage (V)


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