Vishay Siliconix

Si1012R, Si1012X

www.vishay.com

2

Document Number: 71166

S13-0786-Rev. E, 15-Apr-13

This document is subject to change without notice.

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

0.45

0.9

V

Gate-Body Leakage

± 0.5

± 1

µA

Zero Gate Voltage Drain Current

0.3

100

nA

5µA

700

mA

0.41

0.70



0.53

0.85

0.70

1.25

1

S

0.8

1.2

V

Total Gate Charge

750

pC

Gate-Source Charge

75

Gate-Drain Charge

225

Turn-On Delay Time

5

ns

Rise Time

5

Turn-Off Delay Time

25

Fall Time

11