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IRF7324D1TR 数据表(PDF) 2 Page - International Rectifier |
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IRF7324D1TR 数据表(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7324D1 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 — — V VGS = 0V, ID = -250µA RDS(on) Static Drain-to-Source On-Resistance — 0.070 0.180 VGS = -4.5V, ID = -2.9A — 0.115 0.375 VGS = -2.7V, ID = -2.5A VGS(th) Gate Threshold Voltage -0.70 — — V VDS = VGS, ID = -250µA gfs Forward Transconductance 4.0 — — S VDS = -16V, ID = -2.2A IDSS Drain-to-Source Leakage Current — — -1.0 VDS = -16V, VGS = 0V — — -25 VDS = -16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage — — -100 VGS = -12V Gate-to-Source Reverse Leakage — — 100 VGS = 12V Qg Total Gate Charge — 15 22 ID = -2.2A Qgs Gate-to-Source Charge — 2.2 3.3 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge — 6.0 9.0 VGS = -4.5V (see figure 10) td(on) Turn-On Delay Time — 8.4 — VDD = -10V tr Rise Time — 26 — ID = -2.2A td(off) Turn-Off Delay Time — 51 — RG = 6.0Ω tf Fall Time — 33 — RD = 4.5Ω Ciss Input Capacitance — 610 — VGS = 0V Coss Output Capacitance — 310 — pF VDS = -15V Crss Reverse Transfer Capacitance — 170 — ƒ = 1.0MHz (see figure 9) MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Ω µA nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — -2.0 A ISM Pulsed Source Current (Body Diode) — — -23 VSD Body Diode Forward Voltage — — -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time (Body Diode) — 43 65 ns TJ = 25°C, IF = -2.3A Qrr Reverse Recovery Charge — 44 66 nC di/dt = 100A/µs MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units. Conditions IF(av) Max. Average Forward Current 1.7 50% Duty Cycle. Rectangular Wave, TA = 25°C 1.2 TA = 70°C ISM Max. peak one cycle Non-repetitive 120 5µs sine or 3µs Rect. pulse Following any rated Surge current 11 10ms sine or 6ms Rect. pulse load condition & with V RRM applied A A Schottky Diode Maximum Ratings Parameter Max. Units Conditions VFM Max. Forward voltage drop 0.50 IF = 1.0A, TJ = 25°C 0.62 IF = 2.0A, TJ = 25°C 0.39 IF = 1.0A, TJ = 125°C 0.57 IF = 2.0A, TJ = 125°C . IRM Max. Reverse Leakage current 0.05 VR = 20V TJ = 25°C 10 TJ = 125°C Ct Max. Junction Capacitance 92 pF VR = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 3600 V/ µs Rated VR Schottky Diode Electrical Specifications V mA |
类似零件编号 - IRF7324D1TR |
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类似说明 - IRF7324D1TR |
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