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CY7C1563XV18 数据表(PDF) 6 Page - Cypress Semiconductor |
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CY7C1563XV18 数据表(HTML) 6 Page - Cypress Semiconductor |
6 / 29 page Document Number: 001-70205 Rev. *G Page 6 of 29 CY7C1563XV18/CY7C1565XV18 Functional Overview The CY7C1563XV18 and CY7C1565XV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR II+ completely eliminates the need to “turnaround” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 18-bit data transfers in the case of CY7C1563XV18, and four 36-bit data transfers in the case of CY7C1565XV18, in two clock cycles. These devices operate with a read latency of two and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS then device behaves in QDR I mode with a read latency of one clock cycle. Accesses for both ports are initiated on the positive input clock (K). All synchronous input and output timing are referenced from the rising edge of the input clocks (K and K). All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) outputs pass through output registers controlled by the rising edge of the input clocks (K and K) as well. All synchronous control (RPS, WPS, BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K). CY7C1563XV18 is described in the following sections. The same basic descriptions apply to CY7C1565XV18. Read Operations The CY7C1563XV18 is organized internally as four arrays of 1M × 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to the address inputs is stored in the read address register. Following the next two K clock rise, the corresponding lowest order 18-bit word of data is driven onto the Q[17:0] using K as the output timing reference. On the subsequent rising edge of K, the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the input clock (K or K). To maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is transferred out of the device on every rising edge of the input clocks (K and K). When the read port is deselected, the CY7C1563XV18 first completes the pending read transactions. Synchronous internal circuitry automatically tristates the outputs following the next rising edge of the negative input clock (K). This enables for a seamless transition between devices without the insertion of wait states in a depth expanded memory. Write Operations Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device can not be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock (K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). When deselected, the write port ignores all inputs after the pending write operations have been completed. Byte Write Operations Byte write operations are supported by the CY7C1563XV18. A write operation is initiated as described in the Write Operations TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level. NC/144M N/A Not Connected to the Die. Can be tied to any voltage level. NC/288M N/A Not Connected to the Die. Can be tied to any voltage level. VREF Input- Reference Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC measurement points. VDD Power Supply Power Supply Inputs to the Core of the Device. VSS Ground Ground for the Device. VDDQ Power Supply Power Supply Inputs for the Outputs of the Device. Pin Definitions (continued) Pin Name I/O Pin Description |
类似零件编号 - CY7C1563XV18 |
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类似说明 - CY7C1563XV18 |
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