数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

AM29DS323DB120EI 数据表(PDF) 2 Page - Advanced Micro Devices

部件名 AM29DS323DB120EI
功能描述  32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
Download  54 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29DS323DB120EI 数据表(HTML) 2 Page - Advanced Micro Devices

  AM29DS323DB120EI Datasheet HTML 1Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 2Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 3Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 4Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 5Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 6Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 7Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 8Page - Advanced Micro Devices AM29DS323DB120EI Datasheet HTML 9Page - Advanced Micro Devices Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 54 page
background image
PRELIMINARY
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 23480
Rev: A Amendment/+3
Issue Date: November 22, 2000
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29DS323D
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
s Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in other bank
— Zero latency between read and write operations
s Multiple bank architectures
— Two devices available with different bank sizes (refer
to Table 3)
s Secured Silicon (SecSi
™) Sector
Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Customer lockable: Can be read, programmed, or
erased just like other sectors. Once locked, data
cannot be changed
— 64 Kbyte sector size
s Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
s Package options
— 48-ball FBGA
— 48-pin TSOP
s Top or bottom boot block
s Manufactured on 0.23 µm process technology
s Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
s High performance
— Access time as fast 110 ns
— Program time: 13 µs/word typical;
with Accelerate function, 7 µs/word typical
s Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
s Minimum 1 million write cycles guaranteed per sector
s 20 Year data retention at 125
°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
s Data Management Software (DMS)
— AMD-supplied software manages data programming
and erasing, enabling EEPROM emulation
— Eases sector erase limitations
s Supports Common Flash Memory Interface (CFI)
s Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
s Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
s Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
s Any combination of sectors can be erased
s Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
s Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
s WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function provides accelerated
program times
s Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system


类似零件编号 - AM29DS323DB120EI

制造商部件名数据表功能描述
logo
Advanced Micro Devices
AM29DS323DB120EI AMD-AM29DS323DB120EI Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
More results

类似说明 - AM29DS323DB120EI

制造商部件名数据表功能描述
logo
SPANSION
AM29DS32XG SPANSION-AM29DS32XG Datasheet
1,003Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DS320G SPANSION-AM29DS320G Datasheet
711Kb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DS323D AMD-AM29DS323D_06 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
AM29DL322C AMD-AM29DL322C Datasheet
691Kb / 52P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D Datasheet
1Mb / 54P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
SPANSION
AM29DL32XG SPANSION-AM29DL32XG_06 Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
logo
Advanced Micro Devices
AM29DL320G AMD-AM29DL320G Datasheet
1Mb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL32XG AMD-AM29DL32XG Datasheet
1,019Kb / 58P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL322D AMD-AM29DL322D_05 Datasheet
1Mb / 56P
   32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
AM29DL16XD AMD-AM29DL16XD_06 Datasheet
1Mb / 57P
   16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com