TPC8104-H datasheet(2/7 Pages) TOSHIBA

部件名	TPC8104-H

功能描述	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

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制造商	TOSHIBA [Toshiba Semiconductor]

网页	http://www.semicon.toshiba.co.jp/eng

标志

2 / 7 page

TPC8104-H

2002-09-11

2

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2a)

Rth (ch-a)

52.1

°C/W

Thermal resistance, channel to ambient

(t = 10 s)

(Note 2b)

Rth (ch-a)

125

°C/W

Marking (Note 5)

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2:

(a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

Note 3: VDD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −5 A

Note 4: Reptitve rating; pulse width limited by maximum channel temperature.

Note 5: ● on lower left of the marking indicates Pin 1.

※

shows Lot number. (year of manufacture: last decimal digit of the year of manufacture, month of

manufacture: january to december are denoted by letters A to L respectively)

※

Type

TPC8104

H

(a)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

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